| Literature DB >> 30986023 |
E Wlaźlak1, M Marzec, P Zawal, K Szaciłowski.
Abstract
Lead halides in an asymmetric layered structure form memristive devices which are controlled by the electronic structure of the PbX2|metal interface. In this paper, we explain the mechanism that stands behind the I- V pinched hysteresis loop of the device and shortly present its synaptic-like plasticity (spike-timing-dependent plasticity and spike-rate-dependent plasticity) and nonvolatile memory effects. This memristive element was incorporated into a reservoir system, in particular, the echo-state network with delayed feedback, which exhibits brain-like recurrent behavior and demonstrates metaplasticity as one of the available learning mechanisms. It can serve as a classification system that classifies input signals according to their amplitude.Entities:
Keywords: Schottky barrier; memristor; metaplasticity; neuromorphic systems; reservoir computing
Year: 2019 PMID: 30986023 DOI: 10.1021/acsami.9b01841
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229