Literature DB >> 30951485

Nonlinear Networks With Mem-Elements: Complex Dynamics via Flux-Charge Analysis Method.

Fernando Corinto, Mauro Di Marco, Mauro Forti, Leon Chua.   

Abstract

Nonlinear dynamic memory elements, as memristors, memcapacitors, and meminductors (also known as mem-elements), are of paramount importance in conceiving the neural networks, mem-computing machines, and reservoir computing systems with advanced computational primitives. This paper aims to develop a systematic methodology for analyzing complex dynamics in nonlinear networks with such emerging nanoscale mem-elements. The technique extends the flux-charge analysis method (FCAM) for nonlinear circuits with memristors to a broader class of nonlinear networks N containing also memcapacitors and meminductors. After deriving the constitutive relation and equivalent circuit in the flux-charge domain of each two-terminal element in N, this paper focuses on relevant subclasses of N for which a state equation description can be obtained. On this basis, salient features of the dynamics are highlighted and studied analytically: 1) the presence of invariant manifolds in the autonomous networks; 2) the coexistence of infinitely many different reduced-order dynamics on manifolds; and 3) the presence of bifurcations due to changing the initial conditions for a fixed set of parameters (also known as bifurcations without parameters). Analytic formulas are also given to design nonautonomous networks subject to pulses that drive trajectories through different manifolds and nonlinear reduced-order dynamics. The results, in this paper, provide a method for a comprehensive understanding of complex dynamical features and computational capabilities in nonlinear networks with mem-elements, which is fundamental for a holistic approach in neuromorphic systems with such emerging nanoscale devices.

Year:  2019        PMID: 30951485     DOI: 10.1109/TCYB.2019.2904903

Source DB:  PubMed          Journal:  IEEE Trans Cybern        ISSN: 2168-2267            Impact factor:   11.448


  1 in total

1.  Memristor Circuits for Simulating Neuron Spiking and Burst Phenomena.

Authors:  Giacomo Innocenti; Mauro Di Marco; Alberto Tesi; Mauro Forti
Journal:  Front Neurosci       Date:  2021-06-10       Impact factor: 4.677

  1 in total

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