| Literature DB >> 30923219 |
Zhaochu Luo1,2, Trong Phuong Dao3,2,4, Aleš Hrabec3,2,4, Jaianth Vijayakumar2, Armin Kleibert2, Manuel Baumgartner4, Eugenie Kirk3,2, Jizhai Cui3,2, Tatiana Savchenko2, Gunasheel Krishnaswamy4, Laura J Heyderman1,2, Pietro Gambardella5.
Abstract
Magnetically coupled nanomagnets have multiple applications in nonvolatile memories, logic gates, and sensors. The most effective couplings have been found to occur between the magnetic layers in a vertical stack. We achieved strong coupling of laterally adjacent nanomagnets using the interfacial Dzyaloshinskii-Moriya interaction. This coupling is mediated by chiral domain walls between out-of-plane and in-plane magnetic regions and dominates the behavior of nanomagnets below a critical size. We used this concept to realize lateral exchange bias, field-free current-induced switching between multistate magnetic configurations as well as synthetic antiferromagnets, skyrmions, and artificial spin ices covering a broad range of length scales and topologies. Our work provides a platform to design arrays of correlated nanomagnets and to achieve all-electric control of planar logic gates and memory devices.Year: 2019 PMID: 30923219 DOI: 10.1126/science.aau7913
Source DB: PubMed Journal: Science ISSN: 0036-8075 Impact factor: 47.728