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Literature DB >> 30862924

How 2D semiconductors could extend Moore's law.

Ming-Yang Li, Sheng-Kai Su, H-S Philip Wong, Lain-Jong Li.

Abstract

Keywords: Applied physics; Materials science; Technology

Year: 2019 PMID： 30862924 DOI： 10.1038/d41586-019-00793-8

Source DB: PubMed Journal: Nature ISSN： 0028-0836 Impact factor: 49.962

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Cited

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8 in total

1. Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111).

Authors: Kyung Yeol Ma; Leining Zhang; Sunghwan Jin; Yan Wang; Seong In Yoon; Hyuntae Hwang; Juseung Oh; Da Sol Jeong; Meihui Wang; Shahana Chatterjee; Gwangwoo Kim; A-Rang Jang; Jieun Yang; Sunmin Ryu; Hu Young Jeong; Rodney S Ruoff; Manish Chhowalla; Feng Ding; Hyeon Suk Shin
Journal: Nature Date: 2022-06-01 Impact factor: 69.504

2. Surface proximity effect enables layer-by-layer growth of MoS₂.

Authors: Yang Chai
Journal: Natl Sci Rev Date: 2022-06-06 Impact factor: 23.178

Review 3. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers.

Authors: Yu-Chuan Lin; Riccardo Torsi; David B Geohegan; Joshua A Robinson; Kai Xiao
Journal: Adv Sci (Weinh) Date: 2021-02-26 Impact factor: 16.806

4. Gate-bias instability of few-layer WSe₂ field effect transistors.

Authors: Shaofeng Wen; Changyong Lan; Chun Li; Sihan Zhou; Tianying He; Rui Zhang; Ruisen Zou; Hao Hu; Yi Yin; Yong Liu
Journal: RSC Adv Date: 2021-02-10 Impact factor: 3.361

5. Low-defect-density WS₂ by hydroxide vapor phase deposition.

Authors: Yi Wan; En Li; Zhihao Yu; Jing-Kai Huang; Ming-Yang Li; Ang-Sheng Chou; Yi-Te Lee; Chien-Ju Lee; Hung-Chang Hsu; Qin Zhan; Areej Aljarb; Jui-Han Fu; Shao-Pin Chiu; Xinran Wang; Juhn-Jong Lin; Ya-Ping Chiu; Wen-Hao Chang; Han Wang; Yumeng Shi; Nian Lin; Yingchun Cheng; Vincent Tung; Lain-Jong Li
Journal: Nat Commun Date: 2022-07-18 Impact factor: 17.694

How 2D semiconductors could extend Moore's law.

1. Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111).

2. Surface proximity effect enables layer-by-layer growth of MoS₂.

Review 3. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers.

4. Gate-bias instability of few-layer WSe₂ field effect transistors.

5. Low-defect-density WS₂ by hydroxide vapor phase deposition.

6. Controlled growth of 2D ultrathin Ga₂O₃ crystals on liquid metal.

Review 7. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.

8. Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices.

How 2D semiconductors could extend Moore's law.

1. Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111).

2. Surface proximity effect enables layer-by-layer growth of MoS2.

Review 3. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers.

4. Gate-bias instability of few-layer WSe2 field effect transistors.

5. Low-defect-density WS2 by hydroxide vapor phase deposition.

6. Controlled growth of 2D ultrathin Ga2O3 crystals on liquid metal.

Review 7. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.

8. Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices.

2. Surface proximity effect enables layer-by-layer growth of MoS₂.

4. Gate-bias instability of few-layer WSe₂ field effect transistors.

5. Low-defect-density WS₂ by hydroxide vapor phase deposition.

6. Controlled growth of 2D ultrathin Ga₂O₃ crystals on liquid metal.