Literature DB >> 30849766

Advanced radial junction thin film photovoltaics and detectors built on standing silicon nanowires.

Ting Zhang1, Junzhuan Wang, Linwei Yu, Jun Xu, Pere Roca I Cabarrocas.   

Abstract

Three-dimensional (3D) construction of radial junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells on standing silicon nanowires (SiNWs) is a promising strategy to maximize the light harvesting performance and improve the photocarrier collection in an optimized junction configuration. The unique light in-coupling and absorption behaviour in the antenna-like 3D photonic structures also necessitates a set of new theoretical models and simulation tools to design, predict and optimize the photovoltaic performance of radial junction solar cells, which can be rather different from planar junction solar cells. Recently, the performance of radial junction a-Si:H thin film solar cells has progressed steadily to a level comparable or even superior to that of their planar counterparts, with plenty of room for further improvement. This review will first address the growth strategy and critical parameter control of SiNWs produced via a plasma-assisted low-temperature vapour-liquid-solid procedure using low-melting-point metals as the catalyst. Then, the construction of high-performance radial junction thin film solar cells over the standing SiNW matrix, as well as their optimal structural designs, will be introduced. At the end, the new applications of 3D radial junction units will be summarized, which include, for example, the construction of very flexible, low-cost and efficient a-Si:H solar cells with the highest power-to-weight ratio, the demonstration of highly sensitive solar-blind photodetectors operating at the ultraviolet wavelength spectrum and the development of novel biomimetic radial tandem junction photodetectors with an intrinsic red-green-blue (RGB) colour distinguishing capability.

Entities:  

Year:  2019        PMID: 30849766     DOI: 10.1088/1361-6528/ab0e57

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy.

Authors:  Liming Wang; Yichi Zhang; Hao Sun; Jie You; Yuanhao Miao; Zuoru Dong; Tao Liu; Zuimin Jiang; Huiyong Hu
Journal:  Nanoscale Adv       Date:  2020-11-19
  1 in total

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