| Literature DB >> 30786709 |
Arun Malla Chowdhury1, Greeshma Chandan1, Rohit Pant1, Basanta Roul1,2, Deependra Kumar Singh1, K K Nanda1, S B Krupanidhi1.
Abstract
A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n+ type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n+-InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination. The maximum response of this self-powered photodetector is observed at 580 nm for low-intensity irradiance (0.1 mW/cm2), owing to the deep donor states present near the InGaN/AlN interface. It shows a responsivity of 9.64 A/W with rise and fall times of 19.9 and 21.4 μs, respectively. A relation between the open circuit voltage and the responsivity has been realized.Entities:
Keywords: S−I−S heterojunction; broad band detectors; indium gallium nitride; molecular beam epitaxy (MBE); self-powered detectors
Year: 2019 PMID： 30786709 DOI： 10.1021/acsami.8b22569
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229