| Literature DB >> 30740780 |
Furui Tan1,2, Hairen Tan1,3, Makhsud I Saidaminov1, Mingyang Wei1, Mengxia Liu1, Anyi Mei1, Peicheng Li4, Bowen Zhang2, Chih-Shan Tan1, Xiwen Gong1, Yongbiao Zhao1, Ahmad R Kirmani5, Ziru Huang1, James Z Fan1, Rafael Quintero-Bermudez1, Junghwan Kim1, Yicheng Zhao1,4, Oleksandr Voznyy1, Yueyue Gao2, Feng Zhang2, Lee J Richter5, Zheng-Hong Lu4, Weifeng Zhang2, Edward H Sargent1.
Abstract
Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits-in contrast with previously studied insulator-based passivants-the use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.Entities:
Keywords: band alignment; passivation; perovskite solar cells; semiconducting polymers
Year: 2019 PMID: 30740780 DOI: 10.1002/adma.201807435
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849