| Literature DB >> 30733461 |
Chenxu Wang1,2, Tengfei Yang2, Cameron L Tracy1, Chenyang Lu3, Hui Zhang4, Yong-Jie Hu5, Lumin Wang3, Liang Qi5, Lin Gu6, Qing Huang7, Jie Zhang8, Jingyang Wang8, Jianming Xue2, Rodney C Ewing9, Yugang Wang10.
Abstract
Atomic disordering in materials alters their physical and chemical properties and can subsequently affect their performance. In complex ceramic materials, it is a challenge to understand the nature of structural disordering, due to the difficulty of direct, atomic-scale experimental observations. Here we report the direct imaging of ion irradiation-induced antisite defects in Mn+1AXn phases using double CS-corrected scanning transmission electron microscopy and provide compelling evidence of order-to-disorder phase transformations, overturning the conventional view that irradiation causes phase decomposition to binary fcc-structured Mn+1Xn. With the formation of uniformly distributed cation antisite defects and the rearrangement of X anions, disordered solid solution γ-(Mn+1A)Xn phases are formed at low ion fluences, followed by gradual transitions to solid solution fcc-structured (Mn+1A)Xn phases. This study provides a comprehensive understanding of the order-to-disorder transformations in Mn+1AXn phases and proposes a method for the synthesis of new solid solution (Mn+1A)Xn phases by tailoring the disorder.Entities:
Year: 2019 PMID: 30733461 PMCID: PMC6367347 DOI: 10.1038/s41467-019-08588-1
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Structural models and scanning transmission electron microscopic (STEM) results for Ti3AlC2 before and after irradiation along . Schematic and the corresponding atomic arrangements along of pristine hex-Ti3AlC2 (a, b), as well as γ-(Ti3Al)C2 (c, d) and fcc-(Ti3Al)C2 (e, f) induced by ion irradiation at the fluence of 3 × 1014 and 2 × 1016 cm−2, respectively. The intermediated Ti layer in a is denoted as Ti(I) layer, while Ti layers adjacent to Al layers are denoted as Ti(II) layers. The capital letters and the Greek letters in a, c represent the stacking sequences of the cations and anions, respectively. The octahedra in b, d, f indicated that the anions are located at the octahedral interstitial sites of the cations. The crystallographic relationship between the hex-(Ti3Al)C2, γ-(Ti3Al)C2, and fcc-(Ti3Al)C2 is . g, j, m STEM high-angle annular dark-field (HAADF) images of hex-Ti3AlC2, γ-(Ti3Al)C2, and fcc-(Ti3Al)C2. The contrast profiles along the purple lines are shown in h, k, n, which indicates the solid solution process of the Ti/Al atoms at the cation sites. i, l, o Simulated STEM HAADF images of hex-Ti3AlC2, γ-(Ti3Al)C2, and fcc-(Ti3Al)C2, which agree well with the experimental results in g, j, m, respectively. p, s, v STEM ABF images of hex-Ti3AlC2, γ-(Ti3Al)C2, and fcc-(Ti3Al)C2. The contrast profiles along the green lines are shown in q, t, w, which indicates the atomic rearrangements of C atoms at the anion sites. The contrast is inverted for a convenient visualization. r, u, x Simulated STEM ABF images of hex-Ti3AlC2, γ-(Ti3Al)C2, and fcc-(Ti3Al)C2, which agree well with the experimental results in p, s, v, respectively. The scale bars on the HAADF and ABF images correspond to 1 nm
Fig. 2Direct observation of cation antisite defect. a Scanning transmission electron microscopic high-angle annular dark-field (HAADF) image of Ti3AlC2 after irradiation at 3 × 1013 cm−2 along . The white arrows indicate the initial Al layers, whose contrast changed compared to the initial hex-Ti3AlC2. b–c Contrast profiles along lines 1 and 2 in a, respectively, which directly show the variation of the contrast (indicated by the blue arrows) due to the formation of TiAl-AlTi antisite defects induced by ion irradiation. The scale bar on the HAADF image correspond to 1 nm
Fig. 3Chemical distribution in fcc-(Ti3Al)C2 solid solution. a–c Elemental maps of Ti3AlC2 after irradiation at 4 × 1016 cm−2 showing homogeneous distribution of Ti, Al, and C elements. d Concentrations of these elements as a function of depth, which shows uniformly chemical distribution and proves the existence of Al in the irradiated sample. The scale bars on the APT images correspond to 10 nm
Fig. 4Formation of fcc structural solid solutions in seven MAX phases. Grazing incidence X-ray diffraction patterns of Ti3AlC2 (a), Ti2AlC (b), Ti3SiC2 (c), Nb4AlC3 (d), V2AlC (e), Ti4AlN3 (f), and Ti2AlN (g), respectively. Nb4AlC3 was irradiated with 70 KeV He ions and the rest were irradiated with 1 MeV Au ions. There emerge three new diffraction peaks (111, 200, and 220) characteristic of the fcc phases following irradiation, which are indicated by triangles. This indicates that all of these compounds transform from the initial hexagonal structures to fcc structures. The peak positions of the fcc structures are all slightly different from those of their corresponding binary MX compounds
Fig. 5Effect of A content and anion vacancy on unit cell parameter of the fcc-(MA)X solid solutions. Unit cell parameters of seven different fcc-(MA)X solid solutions, i.e., fcc-(Ti3Al)C2 and fcc-(Ti2Al)C in Ti-Al-C system (a), fcc-(Ti3Si)C2 in Ti-Si-C system (b), fcc-(V2Al)C in V-Al-C system (c), fcc-(Nb4Al)C3 in Nb-Al-C system (d), and fcc-(Ti4Al)N3 and fcc-(Ti2Al)N in Ti-Al-N system (e), compared to that of their corresponding binary MX compounds, respectively. The error bars represent the standard deviation of unit cell parameter determined from multiple measurements on samples under the same irradiation conditions. The experimental results and the calculation results agree well. The unit cell parameter in each system decreases with both A (Al or Si) content at the cation sites and X (C or N) vacancy concentration. Error bars represent the s.d. of multiple measurements