| Literature DB >> 30705277 |
Xiaojun Li1,2, Fei Pan1,2, Chenkai Sun1,2, Ming Zhang3, Zhiwei Wang4,5, Jiaqi Du1,2, Jing Wang3, Min Xiao4,5, Lingwei Xue1, Zhi-Guo Zhang1, Chunfeng Zhang6,7, Feng Liu8, Yongfang Li9,10,11.
Abstract
The application of <span class="Chemical">polymer solar cells (PSCs) with n-type organic semiconductor as acceptor requires further improving powder conversion efficiency, increasing stability and decreasing cost of the related materials and devices. Here we report a simplified synthetic route for <span class="Chemical">4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno [1,2-b:5,6-b'] dithiophene by using the catalyst of amberlyst15. Based on this synthetic route and methoxy substitution, two low cost acceptors with less synthetic steps, simple post-treatment and high yield were synthesized. In addition, the methoxy substitution improves both yield and efficiency. The high efficiency of 13.46% was obtained for the devices with MO-IDIC-2F (3,9-bis(2-methylene-5 or 6-fluoro-(3-(1,1-dicyanomethylene)-indanone)-4,4,9,9-tetrahexyl-5,10-dimethoxyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b'] dithiophene) as acceptor. Based on the cost analysis, the PSCs based on MO-IDIC-2F possess the great advantages of low cost and high photovoltaic performance in comparison with those PSCs reported in literatures. Therefore, MO-IDIC-2F will be a promising low cost acceptor for commercial application of PSCs.Entities:
Year: 2019 PMID: 30705277 PMCID: PMC6355909 DOI: 10.1038/s41467-019-08508-3
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Synthetic routes of the central fused ring units. a Synthetic route of the central fused ring core (Compound 2) of IDIC, b optimized synthetic route of Compound 2 and c synthetic route of the central fused ring core MO-IDT
Fig. 2Synthetic routes and physicochemical properties of the acceptors. a Synthetic routes of MO-IDIC and MO-IDIC-2F, b absorption spectra of IDIC, MO-IDIC, and MO-IDIC-2F in chloroform solutions and films, c energy level diagram of the related materials used in the PSCs (the energy levels were measured by electrochemical cyclic voltammetry)
Fig. 3Photovoltaic performance of the PSCs. a J–V curves of the optimized PSCs based on PTQ10: acceptors (1:1) without (as-cast) and with thermal annealing at 120 oC (for the MO-IDIC-based devices) or 110 oC (for the MO-IDIC-2F-based devices) for 5 min, under the illumination of AM 1.5 G, 100 mW cm−2; b IPCE spectra of the corresponding PSCs. Plots of c Voc or PCE and d Jsc or FF vs. the active layer thickness ranging from 115 to 300 nm for the PSCs based on PTQ10: MO-IDIC-2F (1:1, w/w) with thermal annealing at 110 °C for 5 min
Photovoltaic performance parameters of the PSCs based on PTQ10:acceptors (1:1, w/w) under the illumination of AM1.5 G, 100 mW cm−2
| Acceptor | FF (%) | PCE (%) | |||
|---|---|---|---|---|---|
| MO-IDICa | 0.975 (0.974 ± 0.004)b | 16.68 (15.91 ± 0.67) | 66.1 (66.8 ± 1.4) | 10.76c (10.49 ± 0.21) | 16.18 |
| MO-IDICd | 0.969 (0.976 ± 0.006) | 16.92 (16.35 ± 0.37) | 68.1 (68.5 ± 0.6) | 11.16 (10.95 ± 0.10) | 16.38 |
| MO-IDIC-2Fa | 0.899 (0.903 ± 0.003) | 18.31 (17.9 ± 0.56) | 75.2 (73.4 ± 1.8) | 12.39 (12.13 ± 0.12) | 17.84 |
| MO-IDIC-2Fe | 0.906 (0.896 ± 0.005) | 19.87 (19.85 ± 0.46) | 74.8 (73.6 ± 1.5) | 13.46 (13.10 ± 0.16) | 19.12 |
a Without thermal annealing
bAverage values and standard deviation data are calculated from more than 20 devices
cData are the maximum values of the photovoltaic performance of the PSCs
dWith thermal annealing at 120 °C for 5 min
eWith thermal annealing at 110 °C for 5 min
Fig. 5Cost analysis of the photovoltaic materials. a Plot of the calculated material costs (¥ g−1) versus the number of required synthetic steps for the high performance photovoltaic materials and b plots of PCE or calculated material cost-per-peak-Watt (¥ Wp−1) versus the materials cost-per-gram (¥ g−1)
Fig. 4GIWAXS and RSoXS results of active layers of the PSCs. 2D GIWAXS patterns of a as cast PTQ10/MO-IDIC blend films; b PTQ10/MO-IDIC blend films with thermal annealing at 120 oC for 5 min; c as cast PTQ10/MO-IDIC-2F blend films; d PTQ10/MO-IDIC-2F blend films with thermal annealing at 110 oC for 5 min; e line cuts of GIWAXS images of the as cast PTQ10/acceptors blend films; f line cuts of GIWAXS images of the annealed PTQ10/acceptors blend films; and g the RSoXS profiles of PTQ10/MO-IDIC and PTQ10/MO-IDIC-2F blend films as cast and thermal-annealed
Survey of the donor and acceptor materials, as well as the maximum PCE and material costs Cg and Cw
| Materials | PCE (%) | Reference | |||
|---|---|---|---|---|---|
| Donor | Acceptor | ||||
| PTQ10 | MO-IDIC-2F | 13.4 | 254.9 | 0.190 | This work |
| PTQ10 | MO-IDIC | 11.2 | 216.5 | 0.193 | This work |
| PTQ10 | IDIC | 12.7 | 293.9 | 0.231 |
[ |
| PBDTS-TDZ | ITIC | 12.8 | 340.4 | 0.266 |
[ |
| PBTA-TF | ITIM | 13.1 | 465.9 | 0.356 |
[ |
| PBDB-T-SF | ITIC-4F | 13.1 | 534.3 | 0.408 |
[ |
| PBDB-T | NITI | 12.7 | 550.1 | 0.433 |
[ |
| PFDBD-T | C8-ITIC | 13.2 | 789.9 | 0.598 |
[ |
| PDTB-EF-T(P2) | ITIC-4F | 14.2 | 457.8 | 0.322 |
[ |
| PBDB-T-2Cl | ITIC-4F | 14.4 | 450.2 | 0.313 |
[ |
| PBDB-T-2F | ITIC-4F | 13.7 | 606.6 | 0.443 |
[ |
| P3HT | O-IDTBR | 7.0 | 376.7 | 0.538 |
[ |