| Literature DB >> 30699917 |
Paolo Bondavalli1, Marie Blandine Martin2, Louiza Hamidouche3, Alberto Montanaro4, Aikaterini-Flora Trompeta5, Costas A Charitidis6.
Abstract
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray-gun deposition method, developed at Thales Research and Technology. This technique allows extremely uniform mats to be produced while heating the substrate at the boiling point of the solvent used for the suspensions. A thickness of around 150 nm of CNFs sandwiched between two metal layers (the metalized substrate and the top contacts) has been achieved, creating a Metal-Insulator-Metal (MIM) structure typical of ReRAM. After applying a bias, we were able to change the resistance of the oxidized layer between a low (LRS) and a high resistance state (HRS) in a completely reversible way. This is the first time that a scientific group has produced this kind of device using CNFs and these results pave the way for the further implementation of this kind of memory on flexible substrates.Entities:
Keywords: ReRAM; carbon nanofibers; spray-gun deposition
Year: 2019 PMID: 30699917 PMCID: PMC6412718 DOI: 10.3390/mi10020095
Source DB: PubMed Journal: Micromachines (Basel) ISSN: 2072-666X Impact factor: 2.891
Figure 1SEM images of the produced carbon nanofibers (CNFs) in (50,000× and 100,000× magnification) and an Energy Dispersive X-Ray Spectroscopy (EDS) analysis of CNFs for the purification assessment.
Figure 2A Transmission Electron Microscopy (TEM) image of the produced carbon nanofibers (CNFs), showing the interactions of the inner sidewalls.
Figure 3The dynamic spray-gun set-up developed at Thales Research and Technology.
Figure 4SEM images of carbon nanofibers (CNFs) deposited with the spray technique. The coverage rate increases until full coverage is reached in Figure 5e (single nozzle) and 5f (double nozzle). The concentration of the CNFs is increased due to the deposition time (a) 3 μm−1 (b) 6 μm−1 (c) 10 μm−1 (d) 15 μm−1 (e) 30 μm−1 (f) 60 μm−1 (the number corresponds to the CNFs, but an error of around 20% must be taken into account).
Figure 5The side and top views of the sample.
Figure 6(a) The schematic side view of the two states of resistance of the memory stack (b) An image of a cycle obtained by applying a voltage between the inert Pt electrode and the AlCu electrode. The hysteretic change of current results from the migration of oxygen atoms between the carbon nanofiber (CNF) layer and the AlCu metal.
Figure 7(a) Non-purified carbon nanofibers (CNFs) lead to memories being pinned in one state after a few cycles. (b) A memory fabricated with purified CNFs withstands many cycles without being pinned in one state.