| Literature DB >> 30693184 |
Qiulong Li1,2,3, Qichong Zhang1, Juan Sun1, Chenglong Liu1, Jiabin Guo1, Bing He1, Zhenyu Zhou1, Ping Man1, Chaowei Li1,3, Liyan Xie1, Yagang Yao1,2,3.
Abstract
High-performance fiber-shaped energy-storage devices are indispensable for the development of portable and wearable electronics. Composite pseudocapacitance materials with hierarchical core-shell heterostructures hold great potential for the fabrication of high-performance asymmetric supercapacitors (ASCs). However, few reports concerning the assembly of fiber-shaped ASCs (FASCs) using cathode/anode materials with all hierarchical core-shell heterostructures are available. Here, cobalt-nickel-oxide@nickel hydroxide nanowire arrays (NWAs) and titanium nitride@vanadium nitride NWAs are constructed skillfully with all hierarchical core-shell heterostructures directly grown on carbon nanotube fibers and are shown to exhibit ultrahigh capacity and specific capacitance, respectively. The specific features and outstanding electrochemical performances of the electrode materials are exploited to fabricate an FASC device with a maximum working voltage of 1.6 V, and this device exhibits a high specific capacitance of 109.4 F cm-3 (328.3 mF cm-2) and excellent energy density of 36.0 mWh cm-3 (108.1 µWh cm-2). This work therefore provides a strategy for constructing all hierarchical core-shell heterostructured cathode and anode materials with ultrahigh capacity for the fabrication of next-generation wearable energy-storage devices.Entities:
Keywords: CoNiO2@Ni(OH)2; TiN@VN; core–shell nanostructures; fiber‐shaped asymmetric supercapacitors; wearable electronics
Year: 2018 PMID: 30693184 PMCID: PMC6343089 DOI: 10.1002/advs.201801379
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 16.806
Figure 1Schematic diagram of the fabrication of the cathode and anode materials and the FASC device.
Figure 2a,b) SEM images of CoNiO2 NWAs/CNTF at different magnifications. c) SEM image of CoNiO2@Ni(OH)2 NWAs/CNTF. d) Low‐magnification TEM image of single CoNiO2@Ni(OH)2 NWAs. e) High‐magnification TEM image of the blue rectangle in panel (d). f) XRD patterns of the CoNiO2@Ni(OH)2 NWAs, pure CoNiO2 NWAs, and Ni(OH)2 nanosheets. g) TEM image of the CoNiO2@Ni(OH)2 NWAs and the corresponding energy‐dispersive spectroscopy element mapping images.
Figure 3a) GCD curves for the CoNiO2@Ni(OH)2 NWAs/CNTF, CoNiO2 NWAs/CNTF, and Ni(OH)2/CNTF electrodes at a current density of 1 mA cm−2. b) CV curves for the CoNiO2@Ni(OH)2 NWAs/CNTF electrode at various scan rates. c) Plots of the cathodic and anodic peak currents versus the square root of the scan rate. d) Linear fitting of the peak current versus scan rate for the cathodic and anodic peaks of the CV curves shown in (b). e) GCD curves for the CoNiO2@Ni(OH)2 NWAs/CNTF electrode at various current densities. f) Capacity of the three electrodes as a function of current density.
Figure 4a,b) SEM images of TiN NWAs/CNTF at different magnifications. c) SEM image of TiN@VN NWAs/CNTF. d) Low‐magnification TEM image of the TiN NWA@VN NSs. e) High‐magnification TEM image of the red rectangle in panel (d). f) XRD patterns of the TiN@VN NWAs, pure VN NSs, and TiN NWAs. g) TEM image of the TiN NWA@VN NSs and the corresponding energy‐dispersive spectroscopy element mapping images.
Figure 5a) CV curves for the three electrodes at a scan rate of 100 mV s−1. b) GCD curves for the three electrodes at a current density of 1 mA cm−2. c) Nyquist plots for the three electrodes (the inset shows an enlarged section of the Nyquist plots). d) CV curves of the TiN@VN NWAs/CNTF electrode at various scan rates. e) GCD curves of the TiN@VN NWAs/CNTF electrode at various current densities. f) Specific capacitances of the three electrodes calculated from the GCD curves as a function of current density.
Figure 6a) GCD curves for the FASC device acquired at various voltages (0.4–1.6 V) with a current density of 5 mA cm−2. b) Specific capacitance and energy density calculated from the GCD curves obtained at 5 mA cm−2 as a function of the voltage window. c) CV curves for the device obtained at various scan rates between 5 and 50 mV s−1. d) GCD curves for the device acquired at various current densities between 1 and 10 mA cm−2. e) Specific capacitances of the device calculated from the GCD curves as a function of the current density. f) Volumetric energy and power densities of the device compared with those of previously reported devices.
Figure 7a) GCD curves for the as‐assembled FASC device measured at a current density of 5 mA cm−2 under different bending angles. b) Normalized capacitance of the as‐obtained FASC device over 5000 bending cycles at a bending angle of 90°. c) Schematic illustrations of two FASC devices connected in series and in parallel. d,e) GCD curves for two FASC devices connected in series and in parallel at 5 mA cm−2. f) Relationship between total device capacitance and number of FASC devices connected in parallel.