| Literature DB >> 30692647 |
Martin Schwarze1, Christopher Gaul2, Reinhard Scholz3, Fabio Bussolotti4, Andreas Hofacker3, Karl Sebastian Schellhammer2, Bernhard Nell3, Benjamin D Naab5, Zhenan Bao5, Donato Spoltore3, Koen Vandewal3,6, Johannes Widmer3,7, Satoshi Kera4, Nobuo Ueno8, Frank Ortmann9, Karl Leo10.
Abstract
Doped organic semiconductors typically exhibit a thermal activation of their electrical conductivity, whose physical origin is still under scientific debate. In this study, we disclose relationships between molecular parameters and the thermal activation energy (EA) of the conductivity, revealing that charge transport is controlled by the properties of host-dopant integer charge transfer complexes (ICTCs) in efficiently doped organic semiconductors. At low doping concentrations, charge transport is limited by the Coulomb binding energy of ICTCs, which can be minimized by systematic modification of the charge distribution on the individual ions. The investigation of a wide variety of material systems reveals that static energetic disorder induced by ICTC dipole moments sets a general lower limit for EA at large doping concentrations. The impact of disorder can be reduced by adjusting the ICTC density and the intramolecular relaxation energy of host ions, allowing an increase of conductivity by many orders of magnitude.Entities:
Year: 2019 PMID: 30692647 DOI: 10.1038/s41563-018-0277-0
Source DB: PubMed Journal: Nat Mater ISSN: 1476-1122 Impact factor: 43.841