| Literature DB >> 30679681 |
Nobutaka Shioya1, Richard Murdey2, Kazuto Nakao2, Hiroyuki Yoshida3,4, Tomoyuki Koganezawa5, Kazuo Eda6, Takafumi Shimoaka1, Takeshi Hasegawa7.
Abstract
Pentacene attracts a great deal of attention as a basic material used in organic thin-film transistors for many years. Pentacene is known to form a highly ordered structure in a thin film, in which the molecular long axis aligns perpendicularly to the substrate surface, i.e., end-on orientation. On the other hand, the face-on oriented thin film, where the molecular plane is parallel to the substrate, has never been found on an inert substrate represented by SiO2. As a result, the face-on orientation has long been believed to be generated only on specific substrates such as a metal single crystal. In the present study, the face-on orientation grown on a SiO2 surface has first been identified by means of visible and infrared p-polarized multiple-angle incidence resolution spectrometry (pMAIRS) together with two-dimensional grazing incidence X-ray diffraction (2D-GIXD). The combination of the multiple techniques readily reveals that the face-on phase is definitely realized as the dominant component. The face-on film is obtained when the film growth is kinetically restricted to be prevented from transforming into the thermodynamically stable structure, i.e., the end-on orientation. This concept is useful for controlling the molecular orientation in general organic semiconductor thin films.Entities:
Year: 2019 PMID: 30679681 PMCID: PMC6345764 DOI: 10.1038/s41598-018-37166-6
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Conventional (a) and new (b) schematic representations of molecular structure in a pentacene low-temperature thin film revealed by XRD and UV-Vis spectrometry.
Figure 2Vis-pMAIRS spectra of pentacene thin films prepared at 298 (a) and 210 K (b). Two different molecular orientations in pentacene thin films (c,d).
Figure 3IR-pMAIRS spectra of pentacene thin films prepared at 298 (a) and 210 K (b).
Figure 42D-GIXD patterns of pentacene thin films prepared at 298 (a) and 210 K (b).