Literature DB >> 30650204

Strain Engineering of 2D Materials: Issues and Opportunities at the Interface.

Zhaohe Dai1, Luqi Liu1, Zhong Zhang1.   

Abstract

Triggered by the growing needs of developing semiconductor devices at ever-decreasing scales, strain engineering of 2D materials has recently seen a surge of interest. The goal of this principle is to exploit mechanical strain to tune the electronic and photonic performance of 2D materials and to ultimately achieve high-performance 2D-material-based devices. Although strain engineering has been well studied for traditional semiconductor materials and is now routinely used in their manufacturing, recent experiments on strain engineering of 2D materials have shown new opportunities for fundamental physics and exciting applications, along with new challenges, due to the atomic nature of 2D materials. Here, recent advances in the application of mechanical strain into 2D materials are reviewed. These developments are categorized by the deformation modes of the 2D material-substrate system: in-plane mode and out-of-plane mode. Recent state-of-the-art characterization of the interface mechanics for these 2D material-substrate systems is also summarized. These advances highlight how the strain or strain-coupled applications of 2D materials rely on the interfacial properties, essentially shear and adhesion, and finally offer direct guidelines for deterministic design of mechanical strains into 2D materials for ultrathin semiconductor applications.
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  2D materials; adhesion; interface; nanomechanics; strain engineering

Year:  2019        PMID: 30650204     DOI: 10.1002/adma.201805417

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  22 in total

1.  Heterogeneous deformation of two-dimensional materials for emerging functionalities.

Authors:  Jin Myung Kim; Chullhee Cho; Ezekiel Y Hsieh; SungWoo Nam
Journal:  J Mater Res       Date:  2020-02-24       Impact factor: 3.089

2.  Rational strain engineering of single-atom ruthenium on nanoporous MoS2 for highly efficient hydrogen evolution.

Authors:  Kang Jiang; Min Luo; Zhixiao Liu; Ming Peng; Dechao Chen; Ying-Rui Lu; Ting-Shan Chan; Frank M F de Groot; Yongwen Tan
Journal:  Nat Commun       Date:  2021-03-16       Impact factor: 14.919

3.  Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy.

Authors:  Zhongtao Lin; Wuguo Liu; Shibing Tian; Ke Zhu; Yuan Huang; Yang Yang
Journal:  Sci Rep       Date:  2021-03-29       Impact factor: 4.379

4.  Controlling pairing of π-conjugated electrons in 2D covalent organic radical frameworks via in-plane strain.

Authors:  Isaac Alcón; Raúl Santiago; Jordi Ribas-Arino; Mercè Deumal; Ibério de P R Moreira; Stefan T Bromley
Journal:  Nat Commun       Date:  2021-03-17       Impact factor: 14.919

5.  Uniaxially Strained Graphene: Structural Characteristics and G-Mode Splitting.

Authors:  George Kalosakas; Nektarios N Lathiotakis; Konstantinos Papagelis
Journal:  Materials (Basel)       Date:  2021-12-22       Impact factor: 3.623

Review 6.  Mechanical sensors based on two-dimensional materials: Sensing mechanisms, structural designs and wearable applications.

Authors:  Tingting Yang; Xin Jiang; Yuehua Huang; Qiong Tian; Li Zhang; Zhaohe Dai; Hongwei Zhu
Journal:  iScience       Date:  2022-01-01

7.  Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime.

Authors:  Xiaosong Chen; Zhongwu Wang; Jiannan Qi; Yongxu Hu; Yinan Huang; Shougang Sun; Yajing Sun; Wenbin Gong; Langli Luo; Lifeng Zhang; Haiyan Du; Xiaoxia Hu; Cheng Han; Jie Li; Deyang Ji; Liqiang Li; Wenping Hu
Journal:  Nat Commun       Date:  2022-03-16       Impact factor: 14.919

8.  Direct band gap and anisotropic transport of ZnSb monolayers tuned by hydrogenation and strain.

Authors:  Zhizi Guan; Wei Yang; Hongfa Wang; Hailong Wang; Junwen Li
Journal:  RSC Adv       Date:  2022-01-20       Impact factor: 3.361

9.  The Interaction of Hydrogen with the van der Waals Crystal γ-InSe.

Authors:  James Felton; Elena Blundo; Sanliang Ling; Joseph Glover; Zakhar R Kudrynskyi; Oleg Makarovsky; Zakhar D Kovalyuk; Elena Besley; Gavin Walker; Antonio Polimeni; Amalia Patané
Journal:  Molecules       Date:  2020-05-28       Impact factor: 4.411

10.  Bandgap prediction of two-dimensional materials using machine learning.

Authors:  Yu Zhang; Wenjing Xu; Guangjie Liu; Zhiyong Zhang; Jinlong Zhu; Meng Li
Journal:  PLoS One       Date:  2021-08-13       Impact factor: 3.240

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