Literature DB >> 30643207

Spatially resolved steady-state negative capacitance.

Ajay K Yadav1, Kayla X Nguyen2, Zijian Hong3, Pablo García-Fernández4, Pablo Aguado-Puente5, Christopher T Nelson6,7, Sujit Das7, Bhagwati Prasad7, Daewoong Kwon1, Suraj Cheema7, Asif I Khan1,8, Chenming Hu1, Jorge Íñiguez9, Javier Junquera4, Long-Qing Chen3, David A Muller10,11, Ramamoorthy Ramesh7, Sayeef Salahuddin12.   

Abstract

Negative capacitance is a newly discovered state of ferroelectric materials that holds promise for electronics applications by exploiting a region of thermodynamic space that is normally not accessible1-14. Although existing reports of negative capacitance substantiate the importance of this phenomenon, they have focused on its macroscale manifestation. These manifestations demonstrate possible uses of steady-state negative capacitance-for example, enhancing the capacitance of a ferroelectric-dielectric heterostructure4,7,14 or improving the subthreshold swing of a transistor8-12. Yet they constitute only indirect measurements of the local state of negative capacitance in which the ferroelectric resides. Spatial mapping of this phenomenon would help its understanding at a microscopic scale and also help to achieve optimal design of devices with potential technological applications. Here we demonstrate a direct measurement of steady-state negative capacitance in a ferroelectric-dielectric heterostructure. We use electron microscopy complemented by phase-field and first-principles-based (second-principles) simulations in SrTiO3/PbTiO3 superlattices to directly determine, with atomic resolution, the local regions in the ferroelectric material where a state of negative capacitance is stabilized. Simultaneous vector mapping of atomic displacements (related to a complex pattern in the polarization field), in conjunction with reconstruction of the local electric field, identify the negative capacitance regions as those with higher energy density and larger polarizability: the domain walls where the polarization is suppressed.

Year:  2019        PMID: 30643207     DOI: 10.1038/s41586-018-0855-y

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  19 in total

1.  Antiferroelectric negative capacitance from a structural phase transition in zirconia.

Authors:  Michael Hoffmann; Zheng Wang; Nujhat Tasneem; Ahmad Zubair; Prasanna Venkatesan Ravindran; Mengkun Tian; Anthony Arthur Gaskell; Dina Triyoso; Steven Consiglio; Kandabara Tapily; Robert Clark; Jae Hur; Sai Surya Kiran Pentapati; Sung Kyu Lim; Milan Dopita; Shimeng Yu; Winston Chern; Josh Kacher; Sebastian E Reyes-Lillo; Dimitri Antoniadis; Jayakanth Ravichandran; Stefan Slesazeck; Thomas Mikolajick; Asif Islam Khan
Journal:  Nat Commun       Date:  2022-03-09       Impact factor: 14.919

2.  High-density switchable skyrmion-like polar nanodomains integrated on silicon.

Authors:  Lu Han; Christopher Addiego; Sergei Prokhorenko; Meiyu Wang; Hanyu Fu; Yousra Nahas; Xingxu Yan; Songhua Cai; Tianqi Wei; Yanhan Fang; Huazhan Liu; Dianxiang Ji; Wei Guo; Zhengbin Gu; Yurong Yang; Peng Wang; Laurent Bellaiche; Yanfeng Chen; Di Wu; Yuefeng Nie; Xiaoqing Pan
Journal:  Nature       Date:  2022-03-02       Impact factor: 49.962

3.  Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors.

Authors:  Suraj S Cheema; Nirmaan Shanker; Li-Chen Wang; Cheng-Hsiang Hsu; Shang-Lin Hsu; Yu-Hung Liao; Matthew San Jose; Jorge Gomez; Wriddhi Chakraborty; Wenshen Li; Jong-Ho Bae; Steve K Volkman; Daewoong Kwon; Yoonsoo Rho; Gianni Pinelli; Ravi Rastogi; Dominick Pipitone; Corey Stull; Matthew Cook; Brian Tyrrell; Vladimir A Stoica; Zhan Zhang; John W Freeland; Christopher J Tassone; Apurva Mehta; Ghazal Saheli; David Thompson; Dong Ik Suh; Won-Tae Koo; Kab-Jin Nam; Dong Jin Jung; Woo-Bin Song; Chung-Hsun Lin; Seunggeol Nam; Jinseong Heo; Narendra Parihar; Costas P Grigoropoulos; Padraic Shafer; Patrick Fay; Ramamoorthy Ramesh; Souvik Mahapatra; Jim Ciston; Suman Datta; Mohamed Mohamed; Chenming Hu; Sayeef Salahuddin
Journal:  Nature       Date:  2022-04-06       Impact factor: 69.504

4.  Subterahertz collective dynamics of polar vortices.

Authors:  Qian Li; Vladimir A Stoica; Marek Paściak; Yi Zhu; Yakun Yuan; Tiannan Yang; Margaret R McCarter; Sujit Das; Ajay K Yadav; Suji Park; Cheng Dai; Hyeon Jun Lee; Youngjun Ahn; Samuel D Marks; Shukai Yu; Christelle Kadlec; Takahiro Sato; Matthias C Hoffmann; Matthieu Chollet; Michael E Kozina; Silke Nelson; Diling Zhu; Donald A Walko; Aaron M Lindenberg; Paul G Evans; Long-Qing Chen; Ramamoorthy Ramesh; Lane W Martin; Venkatraman Gopalan; John W Freeland; Jirka Hlinka; Haidan Wen
Journal:  Nature       Date:  2021-04-14       Impact factor: 49.962

5.  Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study.

Authors:  Atanu K Saha; Sumeet K Gupta
Journal:  Sci Rep       Date:  2020-06-23       Impact factor: 4.379

6.  Subunit cell-level measurement of polarization in an individual polar vortex.

Authors:  Yuanwei Sun; Adeel Y Abid; Congbing Tan; Chuanlai Ren; Mingqiang Li; Ning Li; Pan Chen; Yuehui Li; Jingmin Zhang; Xiangli Zhong; Jinbin Wang; Min Liao; Kaihui Liu; Xuedong Bai; Yichun Zhou; Dapeng Yu; Peng Gao
Journal:  Sci Adv       Date:  2019-11-01       Impact factor: 14.136

7.  Observation of negative capacitance in antiferroelectric PbZrO3 Films.

Authors:  Leilei Qiao; Cheng Song; Yiming Sun; Muhammad Umer Fayaz; Tianqi Lu; Siqi Yin; Chong Chen; Huiping Xu; Tian-Ling Ren; Feng Pan
Journal:  Nat Commun       Date:  2021-07-09       Impact factor: 14.919

8.  Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework.

Authors:  Cristina Medina-Bailon; Tapas Dutta; Ali Rezaei; Daniel Nagy; Fikru Adamu-Lema; Vihar P Georgiev; Asen Asenov
Journal:  Micromachines (Basel)       Date:  2021-06-10       Impact factor: 2.891

9.  Positive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs.

Authors:  Md Nur K Alam; P Roussel; M Heyns; J Van Houdt
Journal:  Sci Rep       Date:  2019-10-18       Impact factor: 4.379

10.  Atomic imaging of mechanically induced topological transition of ferroelectric vortices.

Authors:  Pan Chen; Xiangli Zhong; Jacob A Zorn; Mingqiang Li; Yuanwei Sun; Adeel Y Abid; Chuanlai Ren; Yuehui Li; Xiaomei Li; Xiumei Ma; Jinbin Wang; Kaihui Liu; Zhi Xu; Congbing Tan; Longqing Chen; Peng Gao; Xuedong Bai
Journal:  Nat Commun       Date:  2020-04-15       Impact factor: 14.919

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