Literature DB >> 30633514

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 via Solid-to-Solid Phase Transformation.

Xiaolong Xu1,2, Shulin Chen3, Shuai Liu1, Xing Cheng1, Wanjin Xu1, Pan Li1, Yi Wan1, Shiqi Yang1,4, Wenting Gong1, Kai Yuan1, Peng Gao2,3,5, Yu Ye1,2, Lun Dai1,2.   

Abstract

Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides, MoTe2 is particularly interesting for phase-engineering applications, because it has the smallest free energy difference between the semiconducting 2H phase and metallic 1T' phase. In this work, we reveal that, under the proper circumstance, Mo and Te atoms can rearrange themselves to transform from a polycrystalline 1T' phase into a single-crystalline 2H phase in a large scale. We manifest the mechanisms of the solid-to-solid transformation by conducting density functional theory calculations, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. The phase transformation is well described by the time-temperature-transformation diagram. By optimizing the kinetic rates of nucleation and crystal growth, we have synthesized a single-crystalline 2H-MoTe2 domain with a diameter of 2.34 mm, a centimeter-scale 2H-MoTe2 thin film with a domain size up to several hundred micrometers, and a seamless 1T'-2H MoTe2 coplanar homojunction. The 1T'-2H MoTe2 homojunction provides an elegant solution for ohmic contact of 2D semiconductors. The controlled solid-to-solid phase transformation in 2D limit provides a new route to realize wafer-scale single-crystalline 2D semiconductor and coplanar heterostructure for 2D circuitry.

Entities:  

Year:  2019        PMID: 30633514     DOI: 10.1021/jacs.8b12230

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  4 in total

Review 1.  Recent Progress in Two-Dimensional MoTe2 Hetero-Phase Homojunctions.

Authors:  Jing Guo; Kai Liu
Journal:  Nanomaterials (Basel)       Date:  2021-12-30       Impact factor: 5.076

2.  Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2.

Authors:  Wanying Du; Xionghui Jia; Zhixuan Cheng; Wanjing Xu; Yanping Li; Lun Dai
Journal:  iScience       Date:  2021-11-22

3.  Low-temperature synthesis of 2D anisotropic MoTe2 using a high-pressure soft sputtering technique.

Authors:  Kentaro Yumigeta; Cameron Kopas; Mark Blei; Debarati Hajra; Yuxia Shen; Dipesh Trivedi; Pranvera Kolari; Nathan Newman; Sefaattin Tongay
Journal:  Nanoscale Adv       Date:  2020-03-04

4.  Schottky barrier lowering due to interface states in 2D heterophase devices.

Authors:  Line Jelver; Daniele Stradi; Kurt Stokbro; Karsten Wedel Jacobsen
Journal:  Nanoscale Adv       Date:  2020-12-07
  4 in total

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