Literature DB >> 30534752

Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching.

Sungjun Kim1, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiang-Shui Miao, Yao-Feng Chang, Byung-Gook Park.   

Abstract

We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 °C up to 145 °C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.

Entities:  

Mesh:

Substances:

Year:  2018        PMID: 30534752     DOI: 10.1039/c8nr06694a

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.

Authors:  Mehr Khalid Rahmani; Min-Hwi Kim; Fayyaz Hussain; Yawar Abbas; Muhammad Ismail; Kyungho Hong; Chandreswar Mahata; Changhwan Choi; Byung-Gook Park; Sungjun Kim
Journal:  Nanomaterials (Basel)       Date:  2020-05-22       Impact factor: 5.076

2.  Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System.

Authors:  Yunseok Lee; Jongmin Park; Daewon Chung; Kisong Lee; Sungjun Kim
Journal:  Nanoscale Res Lett       Date:  2022-09-03       Impact factor: 5.418

3.  Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory.

Authors:  Hyojong Cho; Sungjun Kim
Journal:  Nanomaterials (Basel)       Date:  2020-09-12       Impact factor: 5.076

  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.