Literature DB >> 30510160

Scalable energy-efficient magnetoelectric spin-orbit logic.

Sasikanth Manipatruni1, Dmitri E Nikonov2, Chia-Ching Lin2, Tanay A Gosavi2, Huichu Liu3, Bhagwati Prasad4, Yen-Lin Huang4,5, Everton Bonturim4, Ramamoorthy Ramesh4,5,6, Ian A Young2.   

Abstract

Since the early 1980s, most electronics have relied on the use of complementary metal-oxide-semiconductor (CMOS) transistors. However, the principles of CMOS operation, involving a switchable semiconductor conductance controlled by an insulating gate, have remained largely unchanged, even as transistors are miniaturized to sizes of 10 nanometres. We investigated what dimensionally scalable logic technology beyond CMOS could provide improvements in efficiency and performance for von Neumann architectures and enable growth in emerging computing such as artifical intelligence. Such a computing technology needs to allow progressive miniaturization, reduce switching energy, improve device interconnection and provide a complete logic and memory family. Here we propose a scalable spintronic logic device that operates via spin-orbit transduction (the coupling of an electron's angular momentum with its linear momentum) combined with magnetoelectric switching. The device uses advanced quantum materials, especially correlated oxides and topological states of matter, for collective switching and detection. We describe progress in magnetoelectric switching and spin-orbit detection of state, and show that in comparison with CMOS technology our device has superior switching energy (by a factor of 10 to 30), lower switching voltage (by a factor of 5) and enhanced logic density (by a factor of 5). In addition, its non-volatility enables ultralow standby power, which is critical to modern computing. The properties of our device indicate that the proposed technology could enable the development of multi-generational computing.

Entities:  

Year:  2018        PMID: 30510160     DOI: 10.1038/s41586-018-0770-2

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  24 in total

1.  Ferroelectric materials prompt a rethink of matter.

Authors:  Chris Woolston
Journal:  Nature       Date:  2021-07       Impact factor: 49.962

Review 2.  Multiferroics beyond electric-field control of magnetism.

Authors:  Nicola A Spaldin
Journal:  Proc Math Phys Eng Sci       Date:  2020-01-22       Impact factor: 2.704

3.  Electric-field control of nonlinear THz spintronic emitters.

Authors:  Piyush Agarwal; Lisen Huang; Sze Ter Lim; Ranjan Singh
Journal:  Nat Commun       Date:  2022-07-14       Impact factor: 17.694

4.  From Quantum Materials to Microsystems.

Authors:  Riccardo Bertacco; Giancarlo Panaccione; Silvia Picozzi
Journal:  Materials (Basel)       Date:  2022-06-25       Impact factor: 3.748

5.  Magnetoelectric dissociation of Alzheimer's β-amyloid aggregates.

Authors:  Jinhyeong Jang; Chan Beum Park
Journal:  Sci Adv       Date:  2022-05-11       Impact factor: 14.957

6.  Engineering new limits to magnetostriction through metastability in iron-gallium alloys.

Authors:  P B Meisenheimer; R A Steinhardt; S H Sung; L D Williams; S Zhuang; M E Nowakowski; S Novakov; M M Torunbalci; B Prasad; C J Zollner; Z Wang; N M Dawley; J Schubert; A H Hunter; S Manipatruni; D E Nikonov; I A Young; L Q Chen; J Bokor; S A Bhave; R Ramesh; J-M Hu; E Kioupakis; R Hovden; D G Schlom; J T Heron
Journal:  Nat Commun       Date:  2021-05-12       Impact factor: 14.919

7.  Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics.

Authors:  Humaira Taz; Bhagwati Prasad; Yen-Lin Huang; Zuhuang Chen; Shang-Lin Hsu; Ruijuan Xu; Vishal Thakare; Tamil Selvan Sakthivel; Chenze Liu; Mark Hettick; Rupam Mukherjee; Sudipta Seal; Lane W Martin; Ali Javey; Gerd Duscher; Ramamoorthy Ramesh; Ramki Kalyanaraman
Journal:  Sci Rep       Date:  2020-02-27       Impact factor: 4.379

8.  Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure.

Authors:  Yuanjun Yang; Zhenlin Luo; Shutong Wang; Wenyu Huang; Guilin Wang; Cangmin Wang; Yingxue Yao; Hongju Li; Zhili Wang; Jingtian Zhou; Yongqi Dong; Yong Guan; Yangchao Tian; Ce Feng; Yonggang Zhao; Chen Gao; Gang Xiao
Journal:  iScience       Date:  2021-06-17

Review 9.  Miniaturization of CMOS.

Authors:  Henry H Radamson; Xiaobin He; Qingzhu Zhang; Jinbiao Liu; Hushan Cui; Jinjuan Xiang; Zhenzhen Kong; Wenjuan Xiong; Junjie Li; Jianfeng Gao; Hong Yang; Shihai Gu; Xuewei Zhao; Yong Du; Jiahan Yu; Guilei Wang
Journal:  Micromachines (Basel)       Date:  2019-04-30       Impact factor: 2.891

10.  Superior polarization retention through engineered domain wall pinning.

Authors:  Dawei Zhang; Daniel Sando; Pankaj Sharma; Xuan Cheng; Fan Ji; Vivasha Govinden; Matthew Weyland; Valanoor Nagarajan; Jan Seidel
Journal:  Nat Commun       Date:  2020-01-17       Impact factor: 14.919

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