| Literature DB >> 30500247 |
Kenan Zhang1, Xiaoyu Liu1, Haoxiong Zhang1, Ke Deng1, Mingzhe Yan1, Wei Yao1, Mingtian Zheng2, Eike F Schwier2, Kenya Shimada2, Jonathan D Denlinger3, Yang Wu4, Wenhui Duan1,5, Shuyun Zhou1,5.
Abstract
We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature T_{c}=335 K by angle-resolved photoemission spectroscopy. An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te p_{x} orbitals. The CDW gap can be filled by increasing the temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.Entities:
Year: 2018 PMID: 30500247 DOI: 10.1103/PhysRevLett.121.206402
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161