Literature DB >> 30470010

Solving thermal issues in tensile-strained Ge microdisks.

A Elbaz, M El Kurdi, A Aassime, S Sauvage, X Checoury, I Sagnes, F Bœuf, P Boucaud.   

Abstract

We propose to use Ge-dielectric-metal stacking to allow one to address both thermal management with the metal as an efficient heat sink and tensile strain engineering with the buried dielectric as a stressor layer. This scheme is particularly useful for the development of Ge-based optical sources. We demonstrate experimentally the relevance of this approach by comparing the optical response of tensile-strained Ge microdisks with an Al heat sink or an oxide pedestal. Photoluminescence indicates a much reduced temperature rise in the microdisk (16 K with Al pedestal against 200 K with SiO2 pedestal under a 9 mW continuous wave optical pumping). An excellent agreement is found with finite element modeling of the temperature rise. This original stacking combining metal and dielectrics is promising for integrated photonics where thermal management is an issue.

Entities:  

Year:  2018        PMID: 30470010     DOI: 10.1364/OE.26.028376

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy.

Authors:  Liming Wang; Yichi Zhang; Hao Sun; Jie You; Yuanhao Miao; Zuoru Dong; Tao Liu; Zuimin Jiang; Huiyong Hu
Journal:  Nanoscale Adv       Date:  2020-11-19

2.  Strain Modulation of Selectively and/or Globally Grown Ge Layers.

Authors:  Yong Du; Guilei Wang; Yuanhao Miao; Buqing Xu; Ben Li; Zhenzhen Kong; Jiahan Yu; Xuewei Zhao; Hongxiao Lin; Jiale Su; Jianghao Han; Jinbiao Liu; Yan Dong; Wenwu Wang; Henry H Radamson
Journal:  Nanomaterials (Basel)       Date:  2021-05-28       Impact factor: 5.076

  2 in total

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