Literature DB >> 30468617

Band Alignment and the Built-in Potential of Solids.

Duk-Hyun Choe1, Damien West1, Shengbai Zhang1,2.   

Abstract

The built-in potential is of central importance to the understanding of many interfacial phenomena because it determines the band alignment at the interface. Despite its importance, its exact sign and magnitude have generally been recognized as ill-defined quantities for more than half a century. Here, we provide a common energy reference of bulk matter which leads to an unambiguous definition of the built-in potential and innate (i.e., bulk) band alignment. Further, we find that the built-in potential is explicitly determined by the bulk properties of the constituent materials when the system is in electronic equilibrium, while the interface plays a role only in the absence of equilibrium. Our quantitative theory enables a unified description of a variety of important properties of interfaces, ranging from work functions to Schottky barriers in electronic devices.

Year:  2018        PMID: 30468617     DOI: 10.1103/PhysRevLett.121.196802

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Strain-enhanced giant Rashba spin splitting in ultrathin KTaO3 films for spin-polarized photocurrents.

Authors:  Ning Wu; Xue-Jing Zhang; Bang-Gui Liu
Journal:  RSC Adv       Date:  2020-12-15       Impact factor: 4.036

2.  Extracting band edge profiles at semiconductor heterostructures from hard-x-ray core-level photoelectron spectra.

Authors:  Peter V Sushko; Scott A Chambers
Journal:  Sci Rep       Date:  2020-08-03       Impact factor: 4.379

  2 in total

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