Full compositional control of PbSxSe1-x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD.

Selenium and sulfur derivatives of lead(ii) acylchalcogourato complexes have been used to deposit PbSxSe1-x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1-x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N'-2-naphthoylthioureato]lead(ii) was solved and displayed the expected decreases in Pb-E bond lengths from the previously reported selenium variant.