| Literature DB >> 30430137 |
Lin Jiao1, Sahana Rößler1, Deepa Kasinathan1, Priscila F S Rosa2,3, Chunyu Guo4,5, Huiqiu Yuan4,5,6, Chao-Xing Liu7, Zachary Fisk2, Frank Steglich1,4,8, Steffen Wirth1.
Abstract
The impact of nonmagnetic and magnetic impurities on topological insulators is a central focus concerning their fundamental physics and possible spintronics and quantum computing applications. Combining scanning tunneling spectroscopy with transport measurements, we investigate, both locally and globally, the effect of nonmagnetic and magnetic substituents in SmB6, a predicted topological Kondo insulator. Around the so-introduced substitutents and in accord with theoretical predictions, the surface states are locally suppressed with different length scales depending on the substituent's magnetic properties. For sufficiently high substituent concentrations, these states are globally destroyed. Similarly, using a magnetic tip in tunneling spectroscopy also resulted in largely suppressed surface states. Hence, a destruction of the surface states is always observed close to atoms with substantial magnetic moment. This points to the topological nature of the surface states in SmB6 and illustrates how magnetic impurities destroy the surface states from microscopic to macroscopic length scales.Entities:
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Year: 2018 PMID: 30430137 PMCID: PMC6226282 DOI: 10.1126/sciadv.aau4886
Source DB: PubMed Journal: Sci Adv ISSN: 2375-2548 Impact factor: 14.136
Fig. 1Tunneling spectra with W and Cr tips.
Spectra obtained on nonreconstructed surfaces of pure SmB6 by a W tip (red) and a magnetic Cr tip (blue) at 0.35 K and zero magnetic field (Vb = 50 mV; set-point current Isp = 200 pA). For comparison, a spectrum taken with a W tip at a magnetic field of 12 T is presented (pink, vertically offset by 1 nA/V).
Fig. 2Influence of impurities on spectroscopic results.
(A to C) Topographies (8 nm by 8 nm) of pure SmB6 as well as SmB6:3%Y and SmB6:0.5%Gd. The cyan arrows indicate the ranges and directions of STS measurements around the impurities. (D to F) dI/dV curves of the three samples measured at 0.35 K and zero field. The curves are measured at positions with increasing distance from the impurity (the impurities are located at #1) along the arrows in (A) to (C), correspondingly (Vb = 30 mV; Isp = 100 pA). arb. units, arbitrary units. (G to I) dI/dV values at Vb = −6.5 meV (red) and −2.5 meV (blue) with increasing distance from the impurity (impurities are located at 0). The black dashed lines are fits according to the model (see text S6). hsup and ℓsup indicate the suppression of peak intensity at the impurity and its lateral extent, respectively.
Fig. 3Resistivity of pristine and substituted SmB6.
(A) Temperature dependence of resistivity ρ of pure and differently substituted SmB6 in double-logarithmic presentation. (B) ln(ρ) versus 1/T plot at intermediate temperatures used to derive the energy gap from thermal excitation. The gap values obtained from the slopes of the pristine (pink dashed line) and the lightly substituted samples (green dashed line) above 20 K (dotted vertical line) are given.