Literature DB >> 30427178

Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes.

Kyung Rock Son1, Byeong Ryong Lee1, Tae Geun Kim1.   

Abstract

Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiOX) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiOX electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.

Entities:  

Keywords:  Schottky barrier height; electrical doping treatment; hole injection; microscale light-emitting diodes; silicon oxide; transmittance

Year:  2018        PMID: 30427178     DOI: 10.1021/acsami.8b15364

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs.

Authors:  Ke Zhang; Yibo Liu; Hoi-Sing Kwok; Zhaojun Liu
Journal:  Nanomaterials (Basel)       Date:  2020-04-06       Impact factor: 5.076

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.