| Literature DB >> 30427178 |
Kyung Rock Son1, Byeong Ryong Lee1, Tae Geun Kim1.
Abstract
Light extraction of microscale light-emitting diodes (μLEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiOX) films as p-type contact electrodes for blue μLEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiOX electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based μLEDs.Entities:
Keywords: Schottky barrier height; electrical doping treatment; hole injection; microscale light-emitting diodes; silicon oxide; transmittance
Year: 2018 PMID: 30427178 DOI: 10.1021/acsami.8b15364
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229