| Literature DB >> 30404409 |
Yingchun Peng1,2, Zhiyu Wen3,4, Dongling Li5,6, Zhengguo Shang7,8.
Abstract
Squeeze-film damping and acceleration load are two major issues in the design of inertial micro-switches. In order to deeply and systematically study these two issues, this paper proposes a typical vertically-driven inertial micro-switch, wherein the air and electrode gaps were chosen to design the required damping ratio and threshold value, respectively. The switch was modeled by ANSYS Workbench, and the simulation program was optimized for computational accuracy and speed. Transient analysis was employed to investigate the relationship between the damping ratio, acceleration load, and the natural frequency, and the dynamic properties (including contact bounce, contact time, response time, and threshold acceleration) of the switch. The results can be used as a guide in the design of inertial micro-switches to meet various application requirements. For example, increasing the damping ratio can prolong the contact time of the switch activated by short acceleration duration or reduce the contact bounce of the switch activated by long acceleration duration; the threshold value is immune to variations in the damping effect and acceleration duration when the switch is quasi-statically operated; the anti-jamming capability of the switch can be improved by designing the sensing frequency of the switch to be higher than the acceleration duration but much lower than the other order frequencies of the switch.Entities:
Keywords: MEMS; acceleration; contact bounce; contact time; inertial switch; response time; squeeze-film damping; threshold acceleration
Year: 2016 PMID: 30404409 PMCID: PMC6189996 DOI: 10.3390/mi7120237
Source DB: PubMed Journal: Micromachines (Basel) ISSN: 2072-666X Impact factor: 2.891
Figure 1(a,b) Three-dimensional sketch and (c,d) main geometric specifications of the micro-switch.
Main geometric parameters of the micro-switch (μm).
| 2300 | 50 | 20 | 1600 | 150 | 30 | Variable | Variable |
Figure 2Finite element model of the micro-switch with the contact pair of the protrusion and reduced substrate.
Main material properties of the device structure.
| Material | Density | Young’s Modulus | Poisson’s Ratio |
|---|---|---|---|
| Silicon | 2330 kg/m3 | 169 GPa | 0.28 |
| Glass | 2200 kg/m3 | 70 GPa | 0.17 |
Figure 3(a) Displacement vs. time when , , and , 0.7, and 2, respectively; (b) Contact time vs. damping ratio and response time vs. damping ratio when and ; (c) vs. when , 0.7, and 2, respectively.
Figure 4Displacement vs. time for (a) and (b) when , , 2.5 ms, and 5 ms, respectively; (c) Contact time vs. acceleration duration and response time vs. acceleration duration when and .
Figure 5(a) Contact time vs. acceleration amplitude and response time vs. acceleration amplitude when and ; (b) Displacement vs. time when , , and ; (c) Displacement responses of two kinds of switches (S1 and S2) to the accelerations of 15 g and 2.5 ms applied in x- and z-axes.