| Literature DB >> 30400552 |
Hongtao Feng1, Weiliang Shu2, Hong Xu3, Baoyue Zhang4, Bin Huang5, Jingjing Wang6, Wei Jin7, Yan Chen8.
Abstract
We demonstrate a two-directional tuning method of distributed feedback (DFB) film dye laser devices to achieve high quality lasing and a large tuning range. In this work, we proposed a simple method to fabricate a continuous tunable solid-state dye laser on a flexible Polydimethylsiloxane (PDMS) film. In order to obtain stable and tunable output lasing, the stretching property of the gelatine host was improved by mixing with a certain ratio of glycerol to prevent DFB cavity destruction. We employed two different tuning strategies of the DFB film dye lasers, by stretching the PDMS film in two perpendicular directions, and a nearly 40 nm tuning range in each direction was achieved. The laser device maintained single mode lasing with 0.12 nm linewidth during the tuning process. The reported tunable DFB film dye laser devices have huge potential as coherent light sources for sensing and spectroscopy applications.Entities:
Keywords: distributed feedback; dye laser; tunable
Year: 2017 PMID: 30400552 PMCID: PMC6187928 DOI: 10.3390/mi8120362
Source DB: PubMed Journal: Micromachines (Basel) ISSN: 2072-666X Impact factor: 2.891
Figure 1Schematic design of the tunable DFB film dye laser device and the two-directional tuning strategy. The laser wavelength is adjusted by stretching the grating in two directions.
Figure 2The schematic fabrication process of the tunable DFB film dye laser device.
Figure 3Typical emission spectra of DFB film dye lasers doped with (a) RH 6 G and (b) RH 610.
Figure 4The input–output curve of DFB film dye lasers doped with (a) RH 6 G and (b) RH 610, showing the lasing threshold energy.
Figure 5Normalized lasing spectra of DFB film dye lasers in (a) perpendicular stretching mode (RH 610) and (c) parallel stretching mode (RH 6 G). The relationship of output laser wavelength vs. film deformation in (b) perpendicular stretching mode (RH 610) and (d) parallel stretching mode (RH 6 G).