Literature DB >> 30387660

Atomic Step Flow on a Nanofacet.

Jean-Christophe Harmand1, Gilles Patriarche1, Frank Glas1, Federico Panciera1, Ileana Florea2, Jean-Luc Maurice2, Laurent Travers1, Yannick Ollivier1.   

Abstract

Crystal growth often proceeds by atomic step flow. When the surface area available for growth is limited, the nucleation and progression of the steps can be affected. This issue is particularly relevant to the formation of nanocrystals. We examine the case of Au-catalyzed GaAs nanowires, which we grow in a transmission electron microscope. Our in situ observations show that atomic layers nucleate at the periphery of the interface between the nanowire and the catalyst droplet. From this starting location, the atomic step flows within a restricted area of hexagonal shape. At specific partial coverages, the monolayer configuration changes abruptly. A simple model based on the geometry of the system and its edge energies explains these observations. In particular, we observe an inversion of the step curvature which reveals that the effective energy per unit length of monolayer edge is much lower at the interface periphery than inside the catalyst droplet.

Entities:  

Year:  2018        PMID: 30387660     DOI: 10.1103/PhysRevLett.121.166101

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  9 in total

1.  In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth.

Authors:  Carina B Maliakkal; Daniel Jacobsson; Marcus Tornberg; Axel R Persson; Jonas Johansson; Reine Wallenberg; Kimberly A Dick
Journal:  Nat Commun       Date:  2019-10-08       Impact factor: 14.919

2.  Analytical description of nanowires III: regular cross sections for wurtzite structures.

Authors:  Dirk König; Sean C Smith
Journal:  Acta Crystallogr B Struct Sci Cryst Eng Mater       Date:  2022-07-15

3.  Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram.

Authors:  T Dursap; M Vettori; A Danescu; C Botella; P Regreny; G Patriarche; M Gendry; J Penuelas
Journal:  Nanoscale Adv       Date:  2020-04-13

4.  Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires' Morphology in In Situ TEM.

Authors:  Ya Shen; Xuechun Zhao; Ruiling Gong; Eric Ngo; Jean-Luc Maurice; Pere Roca I Cabarrocas; Wanghua Chen
Journal:  Materials (Basel)       Date:  2022-07-29       Impact factor: 3.748

5.  Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111).

Authors:  Marco Vettori; Alexandre Danescu; Xin Guan; Philippe Regreny; José Penuelas; Michel Gendry
Journal:  Nanoscale Adv       Date:  2019-10-07

6.  Vapor-solid-solid growth dynamics in GaAs nanowires.

Authors:  Carina B Maliakkal; Marcus Tornberg; Daniel Jacobsson; Sebastian Lehmann; Kimberly A Dick
Journal:  Nanoscale Adv       Date:  2021-08-05

7.  Independent Control of Nucleation and Layer Growth in Nanowires.

Authors:  Carina B Maliakkal; Erik K Mårtensson; Marcus Ulf Tornberg; Daniel Jacobsson; Axel R Persson; Jonas Johansson; Lars Reine Wallenberg; Kimberly A Dick
Journal:  ACS Nano       Date:  2020-02-21       Impact factor: 15.881

8.  Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell.

Authors:  Prokhor A Alekseev; Vladislav A Sharov; Bogdan R Borodin; Mikhail S Dunaevskiy; Rodion R Reznik; George E Cirlin
Journal:  Micromachines (Basel)       Date:  2020-06-10       Impact factor: 2.891

9.  Dynamics of Monolayer Growth in Vapor-Liquid-Solid GaAs Nanowires Based on Surface Energy Minimization.

Authors:  Hadi Hijazi; Vladimir G Dubrovskii
Journal:  Nanomaterials (Basel)       Date:  2021-06-26       Impact factor: 5.076

  9 in total

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