Literature DB >> 30357252

A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors.

Bingjie Dang1, Quantan Wu, Fang Song, Jing Sun, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao.   

Abstract

Physically transient electronic devices that can disappear on demand have great application prospects in the field of information security, implantable biomedical systems, and environment friendly electronics. On the other hand, the memristor-based artificial synapse is a promising candidate for new generation neuromorphic computing systems in artificial intelligence applications. Therefore, a physically transient synapse based on memristors is highly desirable for security neuromorphic computing and bio-integrated systems. Here, this is the first presentation of fully degradable biomimetic synaptic devices based on a W/MgO/ZnO/Mo memristor on a silk protein substrate, which show remarkable information storage and synaptic characteristics including long-term potentiation (LTP), long-term depression (LTD) and spike timing dependent plasticity (STDP) behaviors. Moreover, to emulate the apoptotic process of biological neurons, the transient synapse devices can be dissolved completely in phosphate-buffered saline solution (PBS) or deionized (DI) water in 7 min. This work opens the route to security neuromorphic computing for smart security and defense electronic systems, as well as for neuro-medicine and implantable electronic systems.

Entities:  

Year:  2018        PMID: 30357252     DOI: 10.1039/c8nr07442a

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures.

Authors:  Roman V Tominov; Zakhar E Vakulov; Nikita V Polupanov; Aleksandr V Saenko; Vadim I Avilov; Oleg A Ageev; Vladimir A Smirnov
Journal:  Nanomaterials (Basel)       Date:  2022-01-28       Impact factor: 5.076

Review 2.  Neuromorphic Devices for Bionic Sensing and Perception.

Authors:  Mingyue Zeng; Yongli He; Chenxi Zhang; Qing Wan
Journal:  Front Neurosci       Date:  2021-06-29       Impact factor: 4.677

3.  Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films.

Authors:  Roman V Tominov; Zakhar E Vakulov; Vadim I Avilov; Daniil A Khakhulin; Aleksandr A Fedotov; Evgeny G Zamburg; Vladimir A Smirnov; Oleg A Ageev
Journal:  Nanomaterials (Basel)       Date:  2020-05-25       Impact factor: 5.076

  3 in total

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