Literature DB >> 30350588

Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays.

Konrad Maier1, Andreas Helwig1, Gerhard Müller2, Jörg Schörmann3, Martin Eickhoff4.   

Abstract

InGaN/GaN nanowire arrays (NWA) exhibit efficient photoluminescence (PL) in the green spectral range, which extends to temperatures well beyond 200 °C. Previous work has shown that their PL is effectively quenched when oxidizing gas species such as O2, NO2, and O3 abound in the ambient air. In the present work we extend our investigations to reducing gas species, in particular to alcohols and aliphatic hydrocarbons with C1 to C3 chain lengths. We find that these species give rise to an enhancing PL response which can only be observed when the NWAs are operated at elevated temperature and in reactive synthetic air backgrounds. Hardly any response can be observed when the NWAs are operated in inert N2 backgrounds, neither at room temperature nor at elevated temperature. We attribute such enhancing PL response to the removal of quenching oxygen and the formation of enhancing water adsorbates as hydrocarbons interact with oxygen species coadsorbed on the heated InGaN surfaces.

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Keywords:  H2O; III-nitride semiconductors; O2; alcohols; chemisorption; hydrocarbons; nanowires; photoluminescence

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Year:  2018        PMID: 30350588     DOI: 10.1021/acssensors.8b00417

Source DB:  PubMed          Journal:  ACS Sens        ISSN: 2379-3694            Impact factor:   7.711


  1 in total

1.  Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.

Authors:  Florian Pantle; Fabian Becker; Max Kraut; Simon Wörle; Theresa Hoffmann; Sabrina Artmeier; Martin Stutzmann
Journal:  Nanoscale Adv       Date:  2021-05-05
  1 in total

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