Literature DB >> 30311331

Wafer-Scale Fabrication of Ultrathin Flexible Electronic Systems via Capillary-Assisted Electrochemical Delamination.

Heng Zhang1, Youdi Liu1, Chao Yang1, Li Xiang1, Youfan Hu1, Lian-Mao Peng1.   

Abstract

Electronic systems on ultrathin polymer films are generally processed with rigid supporting substrates during fabrication, followed by delamination and transfer to the targeted working areas. The challenge associated with an efficient and innocuous delamination operation is one of the major hurdles toward high-performance ultrathin flexible electronics at large scale. Herein, a facile, rapid, damage-free approach is reported for detachment of wafer-scale ultrathin electronic foils from Si wafers by capillary-assisted electrochemical delamination (CAED). Anodic etching and capillary action drive an electrolyte solution to penetrate and split the polymer/Si interface, leading to complete peel-off of the electronic foil with a 100% success rate. The delamination speed can be controlled by the applied voltage and salt concentration, reaching a maximum value of 1.66 mm s-1 at 20 V using 2 m NaCl solution. Such a process incurs neither mechanical damage nor chemical contamination; therefore, the delaminated electronic systems remain intact, as demonstrated by high-performance carbon nanotube (CNT)-based thin-film transistors and integrated circuits constructed on a 5.5 cm × 5.0 cm parylene-based film with 4 µm thickness. Furthermore, the CAED strategy can be applied for prevalent polymer films and confers great flexibility and capability for designing and manufacturing diverse ultrathin electronic systems.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  capillary-assisted electrochemical etching; carbon nanotubes; polymer film delamination; ultrathin electronics

Year:  2018        PMID: 30311331     DOI: 10.1002/adma.201805408

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  4 in total

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  4 in total

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