Literature DB >> 30297812

Polarity governs atomic interaction through two-dimensional materials.

Wei Kong1, Huashan Li2,3, Kuan Qiao1, Yunjo Kim1, Kyusang Lee1,4, Yifan Nie5, Doyoon Lee1, Tom Osadchy6, Richard J Molnar6, D Kurt Gaskill7, Rachael L Myers-Ward7, Kevin M Daniels7, Yuewei Zhang8, Suresh Sundram9, Yang Yu2, Sang-Hoon Bae1, Siddharth Rajan8, Yang Shao-Horn2, Kyeongjae Cho5, Abdallah Ougazzaden9, Jeffrey C Grossman10, Jeehwan Kim11,12,13.   

Abstract

The transparency of two-dimensional (2D) materials to intermolecular interactions of crystalline materials has been an unresolved topic. Here we report that remote atomic interaction through 2D materials is governed by the binding nature, that is, the polarity of atomic bonds, both in the underlying substrates and in 2D material interlayers. Although the potential field from covalent-bonded materials is screened by a monolayer of graphene, that from ionic-bonded materials is strong enough to penetrate through a few layers of graphene. Such field penetration is substantially attenuated by 2D hexagonal boron nitride, which itself has polarization in its atomic bonds. Based on the control of transparency, modulated by the nature of materials as well as interlayer thickness, various types of single-crystalline materials across the periodic table can be epitaxially grown on 2D material-coated substrates. The epitaxial films can subsequently be released as free-standing membranes, which provides unique opportunities for the heterointegration of arbitrary single-crystalline thin films in functional applications.

Entities:  

Year:  2018        PMID: 30297812     DOI: 10.1038/s41563-018-0176-4

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  11 in total

Review 1.  Recent advances in bioelectronics chemistry.

Authors:  Yin Fang; Lingyuan Meng; Aleksander Prominski; Erik N Schaumann; Matthew Seebald; Bozhi Tian
Journal:  Chem Soc Rev       Date:  2020-07-16       Impact factor: 54.564

2.  Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces.

Authors:  Sebastian Manzo; Patrick J Strohbeen; Zheng Hui Lim; Vivek Saraswat; Dongxue Du; Shining Xu; Nikhil Pokharel; Luke J Mawst; Michael S Arnold; Jason K Kawasaki
Journal:  Nat Commun       Date:  2022-07-18       Impact factor: 17.694

3.  Carrier lifetime enhancement in halide perovskite via remote epitaxy.

Authors:  Jie Jiang; Xin Sun; Xinchun Chen; Baiwei Wang; Zhizhong Chen; Yang Hu; Yuwei Guo; Lifu Zhang; Yuan Ma; Lei Gao; Fengshan Zheng; Lei Jin; Min Chen; Zhiwei Ma; Yuanyuan Zhou; Nitin P Padture; Kory Beach; Humberto Terrones; Yunfeng Shi; Daniel Gall; Toh-Ming Lu; Esther Wertz; Jing Feng; Jian Shi
Journal:  Nat Commun       Date:  2019-09-12       Impact factor: 14.919

4.  Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers.

Authors:  Jung-Hong Min; Kuang-Hui Li; Yong-Hyeon Kim; Jung-Wook Min; Chun Hong Kang; Kyoung-Ho Kim; Jae-Seong Lee; Kwang Jae Lee; Seong-Min Jeong; Dong-Seon Lee; Si-Young Bae; Tien Khee Ng; Boon S Ooi
Journal:  ACS Appl Mater Interfaces       Date:  2021-03-12       Impact factor: 9.229

5.  Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes.

Authors:  Ye Yu; Tao Wang; Xiufang Chen; Lidong Zhang; Yang Wang; Yunfei Niu; Jiaqi Yu; Haotian Ma; Xiaomeng Li; Fang Liu; Gaoqiang Deng; Zhifeng Shi; Baolin Zhang; Xinqiang Wang; Yuantao Zhang
Journal:  Light Sci Appl       Date:  2021-06-03       Impact factor: 17.782

6.  MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates.

Authors:  Kazimieras Badokas; Arūnas Kadys; Dominykas Augulis; Jūras Mickevičius; Ilja Ignatjev; Martynas Skapas; Benjaminas Šebeka; Giedrius Juška; Tadas Malinauskas
Journal:  Nanomaterials (Basel)       Date:  2022-02-25       Impact factor: 5.076

7.  Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.

Authors:  Hongliang Chang; Zhetong Liu; Shenyuan Yang; Yaqi Gao; Jingyuan Shan; Bingyao Liu; Jingyu Sun; Zhaolong Chen; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Peng Gao; Jinmin Li; Zhongfan Liu; Tongbo Wei
Journal:  Light Sci Appl       Date:  2022-04-07       Impact factor: 20.257

Review 8.  Epitaxy of 2D Materials toward Single Crystals.

Authors:  Zhihong Zhang; Xiaonan Yang; Kaihui Liu; Rongming Wang
Journal:  Adv Sci (Weinh)       Date:  2022-01-17       Impact factor: 16.806

9.  Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle.

Authors:  Junseok Jeong; Qingxiao Wang; Janghwan Cha; Dae Kwon Jin; Dong Hoon Shin; Sunah Kwon; Bong Kyun Kang; Jun Hyuk Jang; Woo Seok Yang; Yong Seok Choi; Jinkyoung Yoo; Jong Kyu Kim; Chul-Ho Lee; Sang Wook Lee; Anvar Zakhidov; Suklyun Hong; Moon J Kim; Young Joon Hong
Journal:  Sci Adv       Date:  2020-06-03       Impact factor: 14.136

10.  Universal Oriented van der Waals Epitaxy of 1D Cyanide Chains on Hexagonal 2D Crystals.

Authors:  Yangjin Lee; Jahyun Koo; Sol Lee; Jun-Yeong Yoon; Kangwon Kim; Myeongjin Jang; Jeongsu Jang; Jeongheon Choe; Bao-Wen Li; Chinh Tam Le; Farman Ullah; Yong Soo Kim; Jun Yeon Hwang; Won Chul Lee; Rodney S Ruoff; Hyeonsik Cheong; Jinwoo Cheon; Hoonkyung Lee; Kwanpyo Kim
Journal:  Adv Sci (Weinh)       Date:  2019-12-19       Impact factor: 16.806

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