Literature DB >> 30265098

Topological Switch between Second-Order Topological Insulators and Topological Crystalline Insulators.

Motohiko Ezawa1.   

Abstract

We investigate a topological switch between second-order topological insulators (SOTIs) and topological crystalline insulators (TCIs). Both the SOTI and the TCI are protected by the mirror and inversion symmetries, for which we define the bulk topological numbers of the same type. When an in-plane magnetic field is introduced parallel to one of the helical edges, the system becomes a TCI. The conductance along the edge is 1 in the unit of the conductance quantum e^{2}/h. When it becomes orthogonal to a diagonal line, two topological corner states emerge on its vertices, and the system becomes a SOTI. This may be used as a basis of a topological circuit-changing switch. Alternatively, the device may be used as a sensor to measure local magnetization on a sample surface with a resolution of 10 nm.

Entities:  

Year:  2018        PMID: 30265098     DOI: 10.1103/PhysRevLett.121.116801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Higher-order topology induced by structural buckling.

Authors:  Huaqing Huang; Feng Liu
Journal:  Natl Sci Rev       Date:  2021-09-09       Impact factor: 23.178

2.  Floquet Second-Order Topological Phases in Momentum Space.

Authors:  Longwen Zhou
Journal:  Nanomaterials (Basel)       Date:  2021-04-29       Impact factor: 5.076

3.  Higher-order quantum spin Hall effect in a photonic crystal.

Authors:  Biye Xie; Guangxu Su; Hong-Fei Wang; Feng Liu; Lumang Hu; Si-Yuan Yu; Peng Zhan; Ming-Hui Lu; Zhenlin Wang; Yan-Feng Chen
Journal:  Nat Commun       Date:  2020-07-28       Impact factor: 14.919

4.  Second-order topological insulators and loop-nodal semimetals in Transition Metal Dichalcogenides XTe2 (X = Mo, W).

Authors:  Motohiko Ezawa
Journal:  Sci Rep       Date:  2019-03-27       Impact factor: 4.379

  4 in total

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