Ag:SiO xN y-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application.

We fabricate a Pt/Ag:SiO xN y/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO xN y layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiO xN y-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.