| Literature DB >> 30225059 |
Feng Wang1, Xiaoyuan Liu1, Ehsan Rezaee1, Haiquan Shan1, Yuxia Zhou1, Zong-Xiang Xu1.
Abstract
Boron subphthalocyanine (SubPc) has special physical and chemical properties, originating from its non-centrosymmetric, near-planar taper structure and large conjugated system; it can act as an alternative to the small molecule hole-transporting material 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene in perovskite solar cells (PSCs). To achieve a higher solubility in common organic solvents and a more suitable highest occupied molecular orbital energy level that aligns with the valence band of the perovskite material, a SubPc molecule with a hexamethyl substitution at its peripheral position (Me6-SubPc) was successfully designed and synthesized in a one-step method. Completely solution processed PSCs were fabricated with only a small hysteresis, a power conversion efficiency of 6.96% and Voc of 0.986 V.Entities:
Keywords: dopant-free hole transport material; hexamethyl-substituted subphthalocyanine; planar perovskite solar cell
Year: 2018 PMID: 30225059 PMCID: PMC6124033 DOI: 10.1098/rsos.180617
Source DB: PubMed Journal: R Soc Open Sci ISSN: 2054-5703 Impact factor: 2.963
Scheme 1.Synthetic route of Me6-SubPc.
Me6-SubPc crystallographic data and data collection details.
| identification code | er007(4) |
| empirical formula | C31H28BN6Cl3O2 |
| formula weight | 633.75 |
| temperature (K) | 120.03 |
| crystal system | tetragonal |
| space group | |
| 18.5385(5) | |
| 18.5385(5) | |
| 19.4321(13) | |
| 90 | |
| 90 | |
| 90 | |
| volume (Å3) | 6678.3(6) |
| 8 | |
| 1.261 | |
| 2.781 | |
| F(000) | 2624.0 |
| crystal size (mm−3) | 0.4 × 0.2 × 0.2 |
| radiation | CuK |
| 2 | 6.59–136.744 |
| index ranges | −22 ≤ |
| reflections collected | 32 893 |
| independent reflections | 3167 [ |
| data/restraints/parameters | 3167/0/208 |
| goodness of fit on | 1.059 |
| final | |
| final | |
| largest diff. peak/hole/eÅ−3 | 1.97/−1.02 |
Figure 1.(a) ORTEP (Oak Ridge thermal-ellipsoid plot programme) view of Me6-SubPc. (b) A sphere-like structure containing four Me6-SubPc and four CH2Cl2 molecules. (c) Face-to-face interaction π–π stacking. (d) Offset interaction π–π stacking.
Selected bond lengths (Å) and angles (°) for Me6-SubPc.
| Cl(1)–B(1) | 1.853(5) | N(1)–B(1)–Cl(1) | 115.0(3) |
| N(1)–B(1) | 1.497(6) | N(3)–B(1)–Cl(1) | 112.8(2) |
| N(3)–B(1) | 1.481(4) | N(1)–B(1)–N(3) | 105.1(3) |
| N(1)–C(5) | 1.369(3) | B(1)–N(1)–C(5) | 122.30(18) |
| N(2)–C(5) | 1.344(4) | B(1)–N(3)–C(6) | 123.2(3) |
| N(2)–C(6) | 1.345(4) | B(1)–N(3)–C(15) | 122.9(3) |
| N(3)–C(6) | 1.363(4) | N(1)–C(5)–N(2) | 123.0(3) |
| N(3)–C(15) | 1.370(4) | N(2)–C(6)–N(3) | 122.2(3) |
| N(4)–C(15) | 1.343(4) | N(3)–C(15)–N(4) | 122.2(3) |
Figure 2.UV–Vis absorption spectra of (a) different concentrations of Me6-SubPc in DCM and (b) a comparison of the normalized solution spectra from panel (a) and a deposited film of Me6-SubPc on FTO.
Figure 3.(a) IPS spectra of Me6-SubPc and (b) energy level diagram of the materials used in the fabricated perovskite solar cell.
Figure 4.(a) Cross-sectional scanning electron microscopy image of FTO/SnO2/PCBM/perovskite/Me6-SubPc/Au; AFM image of (b) FTO/SnO2/PCBM/perovskite and (c) FTO/SnO2/PCBM/perovskite/Me6-SubPc.
Photovoltaic parameters of the best device for a reverse and forward scan, averaged photovoltaic parameters of 10 devices with Me6-SubPc as HTL and photovoltaic parameters of the best device with dopant-free spiro-OMeTAD as HTL.
| FF (%) | PCE (%) | |||
|---|---|---|---|---|
| forward | 0.986 | 17.21 | 41 | 6.96 |
| reverse | 0.986 | 17.88 | 39 | 6.88 |
| average | 0.954 ± 0.032 | 17.51 ± 0.52 | 39.4 ± 2.5 | 6.59 ± 0.38 |
| dopant-free spiro-OMeTAD | 0.974 | 14.02 | 43 | 5.87 |
Figure 5.(a) J–V characteristics of the best devices with different HTMs and (b) with Me6-SubPc as HTM, (c) steady-state efficiencies of PSCs with Me6-SubPc as HTM at a constant bias voltage of 0.6 V. (d) Incident photon-to-electron conversion efficiency spectra of the best device employing the hole conductor Me6-SubPc.