Literature DB >> 30222218

Interfacial Defect Vibrations Enhance Thermal Transport in Amorphous Multilayers with Ultrahigh Thermal Boundary Conductance.

Ashutosh Giri1, Sean W King2, William A Lanford3, Antonio B Mei2, Devin Merrill2, Liyi Li2, Ron Oviedo2, John Richards2, David H Olson1, Jeffrey L Braun1, John T Gaskins1, Freddy Deangelis4, Asegun Henry4,5, Patrick E Hopkins1.   

Abstract

The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC). However, recent computational studies have suggested that interfacial defects can enhance this thermal boundary conductance through the emergence of unique vibrational modes intrinsic to the material interface and defect atoms, a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, experimental evidence is provided that interfacial defects can enhance the TBC across interfaces through the emergence of unique high-frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. Ultrahigh TBC is demonstrated at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m-2 K-1 and are further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects, offers a unique direction to manipulate heat transfer across materials with high densities of interfaces by controlling and enhancing interfacial thermal transport.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  amorphous multilayers; thermal boundary conductance; thermal conductivity

Year:  2018        PMID: 30222218     DOI: 10.1002/adma.201804097

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  1 in total

1.  Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor.

Authors:  Yue-Hui Li; Rui-Shi Qi; Ruo-Chen Shi; Jian-Nan Hu; Zhe-Tong Liu; Yuan-Wei Sun; Ming-Qiang Li; Ning Li; Can-Li Song; Lai Wang; Zhi-Biao Hao; Yi Luo; Qi-Kun Xue; Xu-Cun Ma; Peng Gao
Journal:  Proc Natl Acad Sci U S A       Date:  2022-02-22       Impact factor: 12.779

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.