Literature DB >> 30192570

Origins of the Unidirectional Spin Hall Magnetoresistance in Metallic Bilayers.

Can Onur Avci1, Johannes Mendil2, Geoffrey S D Beach1, Pietro Gambardella2.   

Abstract

Recent studies evidenced the emergence of asymmetric electron transport in layered conductors owing to the interplay between electrical conductivity, magnetization, and the spin Hall or Rashba-Edelstein effects. Here, we investigate the unidirectional magnetoresistance (UMR) caused by the current-induced spin accumulation in Co/Pt and CoCr/Pt bilayers. We identify three competing mechanisms underpinning the resistance asymmetry, namely, interface and bulk spin-dependent electron scattering and electron-magnon scattering. Our measurements provide a consistent description of the current, magnetic field, and temperature dependence of the UMR and show that both positive and negative UMR can be obtained by tuning the interface and bulk spin-dependent scattering.

Entities:  

Year:  2018        PMID: 30192570     DOI: 10.1103/PhysRevLett.121.087207

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Optimization of spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers.

Authors:  Łukasz Karwacki; Krzysztof Grochot; Stanisław Łazarski; Witold Skowroński; Jarosław Kanak; Wiesław Powroźnik; Józef Barnaś; Feliks Stobiecki; Tomasz Stobiecki
Journal:  Sci Rep       Date:  2020-07-01       Impact factor: 4.379

2.  Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe.

Authors:  Yan Li; Yang Li; Peng Li; Bin Fang; Xu Yang; Yan Wen; Dong-Xing Zheng; Chen-Hui Zhang; Xin He; Aurélien Manchon; Zhao-Hua Cheng; Xi-Xiang Zhang
Journal:  Nat Commun       Date:  2021-01-22       Impact factor: 14.919

  2 in total

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