Literature DB >> 30169086

Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits.

L Petit1, J M Boter1, H G J Eenink1, G Droulers1, M L V Tagliaferri1, R Li1, D P Franke1, K J Singh2, J S Clarke2, R N Schouten1, V V Dobrovitski1, L M K Vandersypen1, M Veldhorst1.   

Abstract

We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.

Entities:  

Year:  2018        PMID: 30169086     DOI: 10.1103/PhysRevLett.121.076801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations.

Authors:  Elliot J Connors; J Nelson; Lisa F Edge; John M Nichol
Journal:  Nat Commun       Date:  2022-02-17       Impact factor: 17.694

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.