| Literature DB >> 30169086 |
L Petit1, J M Boter1, H G J Eenink1, G Droulers1, M L V Tagliaferri1, R Li1, D P Franke1, K J Singh2, J S Clarke2, R N Schouten1, V V Dobrovitski1, L M K Vandersypen1, M Veldhorst1.
Abstract
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.Entities:
Year: 2018 PMID: 30169086 DOI: 10.1103/PhysRevLett.121.076801
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161