Literature DB >> 30118543

Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides.

Junyong Wang1,2, Ivan Verzhbitskiy1,2, Goki Eda1,2,3.   

Abstract

Ultrathin layers of van der Waals inorganic semiconductors represent a new class of excitonic materials with attractive light-emitting properties. Recent observation of valley polarization, optically pumped lasing, exciton-polaritons, and single-photon emission highlights the exciting prospects for two-dimensional (2D) semiconductors for applications in novel photonic devices. Development of efficient and reliable light sources based on excitonic electroluminescence in 2D semiconductors is of fundamental importance toward the practical implementation of photonic devices. Achieving electroluminescence in these atomically thin layers requires unconventional device designs and in-depth understanding of the carrier injection and transport mechanisms. Herein, various strategies for electrically generating excitons in 2D semiconducting transition metal dichalcogenides such as monolayer MoS2 are reviewed and challenges and opportunities are outlined. Furthermore, novel device concepts such as tunable chiral emission, electrically driven quantum emission, and high-frequency modulation are highlighted.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  2D materials; electroluminescence; layered transition metal dichalcogenides

Year:  2018        PMID: 30118543     DOI: 10.1002/adma.201802687

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  6 in total

1.  Light sources with bias tunable spectrum based on van der Waals interface transistors.

Authors:  Hugo Henck; Diego Mauro; Daniil Domaretskiy; Marc Philippi; Shahriar Memaran; Wenkai Zheng; Zhengguang Lu; Dmitry Shcherbakov; Chun Ning Lau; Dmitry Smirnov; Luis Balicas; Kenji Watanabe; Takashi Taniguchi; Vladimir I Fal'ko; Ignacio Gutiérrez-Lezama; Nicolas Ubrig; Alberto F Morpurgo
Journal:  Nat Commun       Date:  2022-07-07       Impact factor: 17.694

2.  Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors.

Authors:  Matthias Paur; Aday J Molina-Mendoza; Rudolf Bratschitsch; Kenji Watanabe; Takashi Taniguchi; Thomas Mueller
Journal:  Nat Commun       Date:  2019-04-12       Impact factor: 14.919

3.  Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides.

Authors:  Yoon Seok Kim; Sojung Kang; Jae-Pil So; Jong Chan Kim; Kangwon Kim; Seunghoon Yang; Yeonjoon Jung; Yongjun Shin; Seongwon Lee; Donghun Lee; Jin-Woo Park; Hyeonsik Cheong; Hu Young Jeong; Hong-Gyu Park; Gwan-Hyoung Lee; Chul-Ho Lee
Journal:  Sci Adv       Date:  2021-03-26       Impact factor: 14.136

4.  Engineering the Crack Structure and Fracture Behavior in Monolayer MoS2 By Selective Creation of Point Defects.

Authors:  Gang Wang; Yun-Peng Wang; Songge Li; Qishuo Yang; Daiyue Li; Sokrates T Pantelides; Junhao Lin
Journal:  Adv Sci (Weinh)       Date:  2022-05-29       Impact factor: 17.521

Review 5.  The highly-efficient light-emitting diodes based on transition metal dichalcogenides: from architecture to performance.

Authors:  Caiyun Wang; Fuchao Yang; Yihua Gao
Journal:  Nanoscale Adv       Date:  2020-07-22

6.  Boosting quantum yields in two-dimensional semiconductors via proximal metal plates.

Authors:  Yongjun Lee; Johnathas D'arf Severo Forte; Andrey Chaves; Anshuman Kumar; Trang Thu Tran; Youngbum Kim; Shrawan Roy; Takashi Taniguchi; Kenji Watanabe; Alexey Chernikov; Joon I Jang; Tony Low; Jeongyong Kim
Journal:  Nat Commun       Date:  2021-12-07       Impact factor: 14.919

  6 in total

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