| Literature DB >> 30117905 |
S Iadanza, A P Bakoz, P K J Singaravelu, D Panettieri, S A Schulz, G C R Devarapu, S Guerber, C Baudot, F Boeuf, S Hegarty, L O'Faolain.
Abstract
In this paper, we show the experimental results of a thermally stable Si3N4 external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si3N4 Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.Entities:
Year: 2018 PMID: 30117905 DOI: 10.1364/AO.57.00E218
Source DB: PubMed Journal: Appl Opt ISSN: 1559-128X Impact factor: 1.980