| Literature DB >> 30108166 |
Natalie Verstraeten1,2, Jan Michiels3,2, Dorien Wilmaerts1,2, Mariam Bayoumi4, Liselot Dewachter1,2, Wouter Knapen2, Jacek T Mika5, Johan Hofkens5, Peter Dedecker4, Giovanni Maglia4,6.
Abstract
Bacterial populations harbor a small fraction of cells that display transient multidrug tolerance. These so-called persister cells are extremely difficult to eradicate and contribute to the recalcitrance of chronic infections. Several signaling pathways leading to persistence have been identified. However, it is poorly understood how the effectors of these pathways function at the molecular level. In a previous study, we reported that the conserved GTPase Obg induces persistence in Escherichia coli via transcriptional upregulation of the toxin HokB. In the present study, we demonstrate that HokB inserts in the cytoplasmic membrane where it forms pores. The pore-forming capacity of the HokB peptide is demonstrated by in vitro conductance measurements on synthetic and natural lipid bilayers, revealing an asymmetrical conductance profile. Pore formation is directly linked to persistence and results in leakage of intracellular ATP. HokB-induced persistence is strongly impeded in the presence of a channel blocker, thereby providing a direct link between pore functioning and persistence. Furthermore, the activity of HokB pores is sensitive to the membrane potential. This sensitivity presumably results from the formation of either intermediate or mature pore types depending on the membrane potential. Taken together, these results provide a detailed view on the mechanistic basis of persister formation through the effector HokB.IMPORTANCE There is increasing awareness of the clinical importance of persistence. Indeed, persistence is linked to the recalcitrance of chronic infections, and evidence is accumulating that persister cells constitute a pool of viable cells from which resistant mutants can emerge. Unfortunately, persistence is a poorly understood process at the mechanistic level. In this study, we unraveled the pore-forming activity of HokB in E. coli and discovered that these pores lead to leakage of intracellular ATP, which is correlated with the induction of persistence. Moreover, we established a link between persistence and pore activity, as the number of HokB-induced persister cells was strongly reduced using a channel blocker. The latter opens opportunities to reduce the number of persister cells in a clinical setting.Entities:
Keywords: persistence; pore-forming peptide; toxin-antitoxin modules
Mesh:
Substances:
Year: 2018 PMID: 30108166 PMCID: PMC6094483 DOI: 10.1128/mBio.00744-18
Source DB: PubMed Journal: MBio Impact factor: 7.867
FIG 1 (A) Schematic representation of the setup of the conductance measurements on planar lipid bilayers. Peptides are added in trans, at the side of the working electrode. A high voltage is applied to force HokB insertion in the lipid bilayer. After insertion, a pore is formed providing a current when a voltage is applied. The transmembrane part of HokB is shown as an α-helix, with the N-terminal domain (blue) and the C-terminal domain (orange) indicated. (B) Trace showing a stepwise increase in the current visualized in the histogram (+200 mV). (C) Trace showing that HokB is able to form a pore with multiple conductances (+200 mV). (D) Trace of HokB-induced pores showing a noisier outcome (+100 mV). (E) Histogram of conductance measurements of 63 independent single-step insertions of HokB peptides in a bilayer of DPhPC lipids. A Gaussian curve (blue curve) was fitted to the data to calculate the most abundant conductance (0.12 ± 0.01 nS). (F) Current-voltage relation for HokB-induced single pores using DPhPC lipids. Voltage was constant for 1 s and varied between +200 mV and −200 mV, in steps of 25 mV. The averages ± standard errors of the means (SEM) (error bars) of eight independent pores are presented. (G) Upon pore formation, addition of mPEG5k-mal at the cis side does not influence ion current (99.74 pA), while sequential addition to the trans side strongly reduces ion flow (9.78 pA) (+100 mV). (H) An applied high positive voltage induces a strong (nonlinear) increase in conductance, presumably through the formation of a mature pore, while intermediate pores are predominantly present when a lower positive voltage is applied.
FIG 2 (A) Addition of high concentrations of PEG 1000 does not affect the empty vector control but abolishes hokB-induced persistence. Values are means ± SEM (error bars) from at least three independent experiments. Asterisks indicate statistical significance against the control (no PEG 1000 added) (***, P < 0.0001). (B) PI-positive (PI+) cells after hokB expression are not dead, as the RSG staining shows that they are metabolically active. The mean RSG values are 94.35 (±6.58) for PI-negative (PI−) cells and 174.67 (± 12.89) for PI+ cells. Values are means ± SEM from at least three experiments. A representative plot of at least three independent experiments is shown. (C) PI-positive cells after hokB expression are enriched in the subpopulation with a depolarized membrane, measured with DiBAC4(3). A representative plot of at least three independent experiments is shown. (D) hokB expression lowers the cellular energy ratio of stationary-phase cells. Values are means ± SEM from at least three independent experiments. Asterisks indicate statistical significance compared to the empty vector control (***, P < 0.0001). (E) hokB expression results in an increase in ATP in the supernatant from 3-h induction (left y axis). The release of ATP in the supernatant occurs concomitantly with the induction of persistence by hokB in time (right y axis). Values are means ± SEM from at least three independent experiments. Asterisks indicate statistical significance compared to the empty vector control (*, P < 0.05; **, P < 0.001; ***, P < 0.0001). The increase of ATP in the supernatant is not caused by HokB-induced cell lysis, as the concentration of proteins in the supernatant upon expressing hokB is constant in time and unchanged compared to a control sample (71.51 ng µl−1 ± 17.49 for pBAD and 63.17 ng µl−1 ± 17.49 for pBAD-hokB [values represented as means ± SEM]). (F) hokB expression lowers the lag before persister cell outgrowth but does not affect the untreated control. Values are means ± SEM from at least three independent experiments. Asterisks indicate significant differences between pBAD and pBAD-hokB (***, P < 0.0001).
FIG 3 Model of dynamic HokB pore formation. Mature pores are formed when the membrane potential is high, resulting in a decrease in membrane potential and leakage of intracellular ATP. Together, this will induce persistence. Intermediate pores are formed when the membrane potential is low. They collapse the membrane potential, thereby decreasing the cellular energy ratio.