| Literature DB >> 30094231 |
Ruihao Xie1, Lei Ying1, Hailong Liao1, Zhongxin Chen1, Fei Huang1, Yong Cao1.
Abstract
Three small-molecule non-fullerene electron acceptors containing different numbers of fluorine atoms in their end groups were designed and synthesized. All three acceptors were found to exhibit relatively narrow band gaps with absorption profiles extending into the near-infrared region. The fluorinated analog exhibited enhanced light-harvesting capabilities, which led to improved short-circuit current densities. Moreover, fluorination improved the blend film morphology and led to desirable phase separation that facilitated exciton dissociation and charge transport. As a result of these advantages, organic solar cells based on the non-fullerene acceptors exhibited clearly improved short-circuit current densities and power conversion efficiencies compared with the device based on the non-fluorinated acceptor. These results suggest that fluorination can be an effective approach for the molecular design of non-fullerene acceptors with near-infrared absorption for organic solar cells.Entities:
Keywords: fluorination; near-infrared absorption; non-fullerene; organic solar cells; small molecule electron acceptors
Year: 2018 PMID: 30094231 PMCID: PMC6071513 DOI: 10.3389/fchem.2018.00303
Source DB: PubMed Journal: Front Chem ISSN: 2296-2646 Impact factor: 5.221
Scheme 1Synthetic route of the small-molecule non-fullerene acceptors.
Figure 1(A) Chemical structure of PTZPF; (B) UV–vis absorption spectra and (C) energy level diagrams of BT-IC, BT-F, BT-2F, and PTZPF; (D) UV–vis spectra of PTZPF:NFA blend films.
Optophysical and electrochemical properties of active layer materials.
| BT-IC | 760 | 866 | 1.43 | 1.05 | −0.62 | −5.55 | −3.88 |
| BT-F | 774 | 872 | 1.42 | 1.07 | −0.53 | −5.57 | −3.97 |
| BT-2F | 778 | 878 | 1.41 | 1.10 | −0.50 | −5.60 | −4.00 |
| PTZPF | 528 | 620 | 2.00 | 0.91 | −1.08 | −5.41 | −3.42 |
Calculated from the onset of UV-vis absorption as pristine thin films;
E;
E.
Figure 2(A) J–V curves and (B) EQE spectra of OSC devices measured under AM 1.5 G illumination at 100 mW cm−2.
Photovoltaic parameters of OSCs measured under AM1.5 Illumination at 100 mW cm−2.
| PTZPF:BT-IC | 0.93 | 12.27 | 12.23 | 49.0 | 5.63 (5.45) |
| PTZPF:BT-F | 0.88 | 16.64 | 16.36 | 49.0 | 7.27 (7.00) |
| PTZPF:BT-2F | 0.84 | 19.29 | 18.88 | 53.0 | 8.54 (8.50) |
All of the blend films are processed by CB with 0.5 vol % CN and treated with 120°C for 10 min;
Obtained from J–V measurements;
Obtained from the integration of EQE spectra;
Average values across more than 6 devices. Device structure: ITO/PEDOT:PSS/active layer/PFN-Br/Ag.
Figure 3(A,B) Photoluminescence spectra of pristine donor films (excited at 500 nm), pristine acceptor films (excited at 720 nm) and corresponding blend films (excited at both 500 and 720 nm) with a film thickness of about 100 nm; (C,D) plots of (c) JSC and (d) VOC vs. light intensity for devices based on PTZPF:NFA blend films.
Figure 4AFM height images (10 μm × 10 μm) of (a) PTZPF:BT-IC, (b) PTZPF:BT-F, and (c) PTZPF:BT-2F; TEM images of (d) PTZPF:BT-IC, (e) PTZPF:BT-F, and (f) PTZPF:BT-2F.