| Literature DB >> 30084638 |
Petr Ashcheulov1, Andrew Taylor1, Vincent Mortet1,2, Aleš Poruba3, Florian Le Formal4, Hana Krýsová5, Mariana Klementová1,6, Pavel Hubík1, Jaromír Kopeček1, Jan Lorinčík7, Jun-Ho Yum4, Irena Kratochvílová1, Ladislav Kavan5, Kevin Sivula4.
Abstract
Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal toward a suitable protection of otherwise unstable semiconductors used in PEC cells. Here, we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that BDD layers protect the underlying Si photoelectrodes over a wide pH range (1-14) in aqueous electrolyte solutions. A BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution. Si|BDD photoelectrodes show no sign of performance degradation after a continuous PEC treatment in neutral, acidic, and basic electrolytes. The deposition of a cobalt phosphate (CoPi) oxygen evolution catalyst onto the BDD layer significantly reduces the overpotential for water oxidation, demonstrating the ability of BDD layers to substitute the transparent conductive oxide coatings, such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO), frequently used as protective layers in Si photoelectrodes.Entities:
Keywords: nanocrystalline diamond; photoanode; protective coating; silicon photoelectrodes; transparent conductive film; water splitting
Year: 2018 PMID: 30084638 DOI: 10.1021/acsami.8b08714
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229