| Literature DB >> 30071613 |
Abstract
Nitrogen (and also oxygen) determination has become an important parameter to characterize (oxy)nitride materials for many properties and applications. Analyzing such anions with accuracy is still a challenge for some materials. However, to date, a large panel of methodologies is available to answer this issue with relevant results, even for thin films. Carrier gas hot extraction techniques and electron probe microanalysis with wavelength dispersive spectroscopy (EPMA-WDS) look attractive to analyze bulk materials and thin films, respectively. This paper gathers several techniques using chemical and physical routes to access such anionic contents. Limitations and problems are pointed out for both powders and films.Entities:
Keywords: (oxy)nitride; nitrogen analysis; powder; thin films
Year: 2018 PMID: 30071613 PMCID: PMC6119940 DOI: 10.3390/ma11081331
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Characteristics of the chemical methods.
| Techniques | Thin Film | Characteristics |
|---|---|---|
| TGA |
|
tens of mg as a first approach limits due to the presence of impurities and volatile species |
| Rietveld analysis |
|
neutron diffraction for oxynitrides high-quality diffraction data suitable for highly crystalline samples |
| Kjeldahl method |
|
acid-base determination around ten mg the (oxy)nitrides need to be fully decomposed by KOH around 200 °C in solution |
| Grekov method |
|
alternative to Kjeldahl analysis acid-base determination around ten mg the (oxy)nitrides need to be fully decomposed in melted KOH around 450 °C |
| Combustion analysis |
|
few mg of sample elemental analyses: N, O, H, C, S very high temperatures accurate and reproducible needs calibration standards fast, easy method and costly consumables |
×—the method is not validated for thin films.
Figure 1Device used for nitrogen determination.
Figure 2Original set-up developed by Jean-Baptiste Dumas.
Characteristics of the physical methods.
| Techniques | Thin Films | Characteristics |
|---|---|---|
| EDS |
|
calibration with standards not appropriate for light elements, allow to determine only their presence, but not accurately possible overlapping between N and other contributions (i.e., with Ti) estimated measurement error of 5 at% |
| WDS | √ |
calibration with standards higher spectral resolution appropriate from light elements starting from B thick film (>1 μm) estimated error of 1 at% possible overlapping between elements contributions (i.e., between V and Ti) estimated measurement error of 1 at% |
| ERDA | √ |
non-destructive method, no standards requires a source of high energy heavy ions depth profile and elemental composition accurate quantification of light elements detection limit <0.1 at% estimated measurement error of 0.1 at% |
| RBS | √ |
requires a source of energetic light ions detection limit around 0.1 at% thin films with thicknesses <150 nm |
| NRA | √ |
complementary to RBS fine elemental analysis from Li to F access to low concentrations in thin layers detection limit 10–1000 ppm |
| SIMS | √ |
depth concentration profile quantitative interpretation difficult (standards) sensitive technique to ppb level |
| AES | √ |
requires conductive samples high spatial resolution detection limit of 0.1 at% |
| XPS | √ |
depth profile detection limit of 0.1–1 at% |
×—the method is not validated for thin films; √—the method is validated for thin films.