| Literature DB >> 30062893 |
S L de Bonis1, C Urgell1, W Yang1, C Samanta1, A Noury1, J Vergara-Cruz1, Q Dong2, Y Jin2, A Bachtold1.
Abstract
Mechanical resonators based on a single carbon nanotube are exceptional sensors of mass and force. The force sensitivity in these ultralight resonators is often limited by the noise in the detection of the vibrations. Here, we report on an ultrasensitive scheme based on a RLC resonator and a low-temperature amplifier to detect nanotube vibrations. We also show a new fabrication process of electromechanical nanotube resonators to reduce the separation between the suspended nanotube and the gate electrode down to ∼150 nm. These advances in detection and fabrication allow us to reach [Formula: see text] displacement sensitivity. Thermal vibrations cooled cryogenically at 300 mK are detected with a signal-to-noise ratio as high as 17 dB. We demonstrate [Formula: see text] force sensitivity, which is the best force sensitivity achieved thus far with a mechanical resonator. Our work is an important step toward imaging individual nuclear spins and studying the coupling between mechanical vibrations and electrons in different quantum electron transport regimes.Entities:
Keywords: NEMS; Nanomechanical resonators; carbon nanotube; displacement sensitivity; force sensitivity
Year: 2018 PMID: 30062893 PMCID: PMC6089494 DOI: 10.1021/acs.nanolett.8b02437
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189
Figure 1Nantotube resonator and electrical circuit for the detection of the vibrations. (a) False-color scanning electron microscopy image of a typical nanotube resonator fabricated with the “fast heating” chemical vapor deposition method. The ∼20 nm high ridges at the edges of the gate electrodes are attributed to resist residues. The scale bar is 1 μm. (b) Schematic of the measurement of the nanotube vibrations using the RLC resonator and the HEMT amplifier cooled at 3.2 K. The base temperature of the cryostat is ∼20 mK. An oscillating voltage with amplitude Vsdac is applied between electrodes S and D, and a constant voltage VGdc is applied to electrode G. (c) Temperature dependence of the current noise floor of the circuit measured at ωRLC.
Figure 2Driven and thermal vibrations of the nanotube resonator. (a) Gate voltage dependence of the resonance frequency of the fundamental eigenmode. The small positive offset voltage Voff = 0.119 V due to the work function difference between the nanotube and the gate electrode is subtracted from the applied VGdc value. (b) Driven response of the two lowest-frequency detected mechanical eigenmodes as a function of the drive frequency measured with the two-source method. The resonances are indicated by two red arrows. (c) Spectrum of the displacement noise of the fundamental eigenmode measured at the base temperature of the cryostat when applying VGdc = −0.21 V and Vsdac = 40 μV. The resonance frequency f0 is given in the figure. (d) Variance of the displacement measured as a function of cryostat temperature.
Thermal Force Noise SFFth, Force Noise Due to the Imprecision of the Detection SFFimp, and Total Force Sensitivity SFF for Different Resonatorsa
| description | |||
|---|---|---|---|
| 4.0 × 10–21 | 1.6 × 10–21 | 4.3 × 10–21 | nanotube (this work) |
| 2.0 × 10–20 | negligible | 2.0 × 10–20 | levitating particle[ |
| 2.7 × 10–19 | 2.7 × 10–19 | 3.9 × 10–19 | graphene[ |
| 1.0 × 10–18 | negligible | 1.0 × 10–18 | silicon nanowire[ |
| 5.0 × 10–18 | negligible | 5.0 × 10–18 | GaAs/AlGaAs nanowire[ |
| 1.6 × 10–19 | 1.0 × 10–19 | 1.9 × 10–19 | microfabricated ladder[ |
| 5.1 × 10–19 | negligible | 5.1 × 10–19 | microfabricated beam[ |
| 2.0 × 10–17 | negligible | 2.0 × 10–17 | microfabricated trampoline[ |
| 1.2 × 10–20 | unknown | unknown | nanotube[ |
| ∼1 × 10–21 | unknown | unknown | nanotube[ |
The three force noises are related by SFFth + SFFimp = SFF.
Figure 3Spectrum of the displacement noise modified by the oscillating voltage with amplitude Vsdac applied across the nanotube. (a) Spectrum of the displacement noise of the fundamental eigenmode measured at the base temperature of the cryostat when applying VGdc = −0.255 V and Vsdac = 70 μV. (b) Same as (a) but with the cryostat temperature set at 300 mK and Vsdac = 400 μV. (c,d) Dependence of the variance of the displacement on Vsdac measured at the base temperature of the cryostat and 300 mK. (e,f) Dependence of the displacement sensitivity on Vsdac measured at the base temperature of the cryostat and 300 mK.