| Literature DB >> 30034653 |
Azar Yadegari1, Mohammad Azim Karami1, Mohammad Reza Daliri1.
Abstract
Implantable image sensors have several biomedical applications due to their miniature size, light weight, and low power consumption achieved through sub-micron standard CMOS (Complementary Metal Oxide Semiconductor) technologies. The main applications are in specific cell labeling, neural activity detection, and biomedical imaging. In this paper the recent research studies on implantable CMOS image sensors for neural activity monitoring of brain are being quantified and reviewed. Based on the results, the suitable implantable image sensors for brain neural monitoring should have high signal to noise ratio of above 60 dB, high dynamic range of near 88 dB and low power consumption than the safety threshold of 4W/cm2. Moreover, it is found out that the next generation of implantable imaging device trend should reduce the pixel size and power consumption of CMOS image sensors to increase spatial resolution of sample images.Entities:
Keywords: Image sensor; Implantable devices; Neural monitoring
Year: 2018 PMID: 30034653 PMCID: PMC6037429 DOI: 10.29252/NIRP.BCN.9.3.227
Source DB: PubMed Journal: Basic Clin Neurosci ISSN: 2008-126X
Figure 1(a) Block diagram of the hardware interface of imaging system; (b) Multiple sensors are linked together to reduce the system size, sharing lines, boards, and connectors; (c) Pixel layout of image sensor and schematic image of an imaging system which is implanted in the mouse’s brain
Figure 2Different approaches to deliver light into and detecting optical signals from outside of the body
(a) Transdermal approach for light delivery and detection (head-mountable device); (b) Fiber-optic device approach; (c) Semiconductor device approach (the brain-implantable device)
Figure 3Target area of ideal SNR implantable image sensors (Sasagawa, et al., 2016)
Figure 4Schematic diagram of three-transistor Active Pixel Sensor
Comparison of implantable image sensor specifications in different works
| Technology (μm) | 0.35 | 0.35 | 0.35 | 0.35 | 0.35 |
| Pixel array | 60×60 | 900×1920 | 176×144 | 60 H×134 V | 60 H×20 V |
| Peak SNR (dB) | - | - | - | 59 | 64 |
| Pixel type | 3-Tr APS | 3-Tr APS | 3-Tr APS | 3-Tr APS | 3-Tr APS |
| Dynamic range (dB) | - | - | 66 | High | Hhigh |
| Fill factor (%) | 35 | 44 | 30 | 31 | 26 |
| Chip size (μm×μm) | 570×850 μm2 | 1048.6×2700 μm2 | 2×2.2 mm2 | 1H×2.7 Vmm2 | 1050H×3000 Vμm2 |
| Pixel size (μm×μm) | 7.5×7.5 μm2 | 7.5×7.5 μm2 | 7.5×7.5 μm2 | 15H×15 Vμm2 | 15H×15 Vμm2 |
| Frame rate (Hz) | 71.5 | 58 | - | 300 | 40.6 |
| Power consumption (mW) | - | - | - | 185 | 20 |
| Weight (g) | - | 0.02 | - | 0.02 | 0.02 |
| Transistor per pixel | - | - | - | 10 | 11 |
| Photodiode | n-well/p-sub | n-well/p-sub | n-well/p-sub | n-well/p-sub | n-well/p-sub |