Literature DB >> 30033715

Defect-Induced Exchange Bias in a Single SrRuO3 Layer.

Changan Wang1,2,3, Chao Chen, Ching-Hao Chang4, Hsu-Sheng Tsai1, Parul Pandey1, Chi Xu1, Roman Böttger1, Deyang Chen, Yu-Jia Zeng3, Xingsen Gao, Manfred Helm1,2, Shengqiang Zhou1.   

Abstract

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

Entities:  

Keywords:  defect engineering; exchange bias; lattice distortion; magnetization; oxide thin film

Year:  2018        PMID: 30033715     DOI: 10.1021/acsami.8b07918

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

Authors:  Tobias Vogel; Alexander Zintler; Nico Kaiser; Nicolas Guillaume; Gauthier Lefèvre; Maximilian Lederer; Anna Lisa Serra; Eszter Piros; Taewook Kim; Philipp Schreyer; Robert Winkler; Déspina Nasiou; Ricardo Revello Olivo; Tarek Ali; David Lehninger; Alexey Arzumanov; Christelle Charpin-Nicolle; Guillaume Bourgeois; Laurent Grenouillet; Marie-Claire Cyrille; Gabriele Navarro; Konrad Seidel; Thomas Kämpfe; Stefan Petzold; Christina Trautmann; Leopoldo Molina-Luna; Lambert Alff
Journal:  ACS Nano       Date:  2022-09-16       Impact factor: 18.027

  1 in total

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