| Literature DB >> 30004772 |
Ryuichi Ohta1, Hajime Okamoto1, Takehiko Tawara1, Hideki Gotoh1, Hiroshi Yamaguchi1.
Abstract
We numerically and experimentally investigate strain-induced coupling between dark and bright excitons and its dynamic control using a gallium arsenide (GaAs) micromechanical resonator. Uniaxial strain induced by the mechanical resonance efficiently detunes the exciton energies and modulates the coupling strength via the deformation potential in GaAs. This allows optical access to the long-lived dark states without using any external electromagnetic field. This field-free approach could be expanded to a wide range of solid-state materials, leading to on-chip excitonic memories and circuits based on micromechanical resonators.Entities:
Year: 2018 PMID: 30004772 DOI: 10.1103/PhysRevLett.120.267401
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161