| Literature DB >> 30002850 |
Paul Benjamin Klar1, Iñigo Etxebarria2, Gotzon Madariaga1.
Abstract
Synchrotron single-crystal X-ray diffraction has revealed diffuse scattering alongside sharp satellite reflections for different samples of mullite (Al4+2x Si2-2x O10-x ). Structural models have been developed in (3+1)-dimensional superspace that account for vacancy ordering and Al/Si ordering based on harmonic modulation functions. A constraint scheme is presented which explains the crystal-chemical relationships between the split sites of the average structure. The modulation amplitudes of the refinements differ significantly by a factor of ∼3, which is explained in terms of different degrees of ordering, i.e. vacancies follow the same ordering principle in all samples but to different extents. A new approach is applied for the first time to determine Al/Si ordering by combining density functional theory with the modulated volumes of the tetrahedra. The presence of Si-Si diclusters indicates that the mineral classification of mullite needs to be reviewed. A description of the crystal structure of mullite must consider both the chemical composition and the degree of ordering. This is of particular importance for applications such as advanced ceramics, because the physical properties depend on the intrinsic structure of mullite.Entities:
Keywords: Al/Si ordering; ceramics; incommensurate structures; superspace; vacancy ordering
Year: 2018 PMID: 30002850 PMCID: PMC6038955 DOI: 10.1107/S2052252518007467
Source DB: PubMed Journal: IUCrJ ISSN: 2052-2525 Impact factor: 4.769
Figure 1A model of the main structural elements of mullite. Chains of AlO6 octahedra along the c axis are interconnected via a network of dicluster and tricluster tetrahedra, which also form chains along the c axis. The Al/Si ratio determines the concentration of vacancies which in turn determines the concentration of triclusters, as each vacancy has a characteristic environment of two triclusters. Subsequent AB layers are shown with decreasing opacity to indicate that the vacancies do not form channels but are completely enclosed by the network of tetrahedra. In this model, below each vacancy there is a dicluster that consists of two Si cations.
Experimental details (T = 293 K)
| (I), SA1 | (II), SA2 | (III), SA3 | (IV), QG | |
|---|---|---|---|---|
| Crystal data | ||||
| Chemical formula | Al4.856Si1.144O9.572 (4) | Al4.832Si1.168O9.584 (4) | Al4.868Si1.132O9.566 (6) | Al4.852Si1.148O9.574 (3) |
|
| 316.3 | 316.5 | 316.2 | 316.3 |
| Crystal system, space group | Orthorhombic, | |||
| Wavevector | 0.2988 (9) | 0.301 (2) | 0.3068 (19) | 0.2948 (19) |
|
| 7.5787 (7) | 7.577 (2) | 7.5768 (13) | 7.577 (2) |
|
| 7.6707 (4) | 7.6727 (18) | 7.6760 (16) | 7.6738 (19) |
|
| 2.8836 (1) | 2.8804 (10) | 2.8833 (12) | 2.8823 (10) |
|
| 167.64 (2) | 167.46 (8) | 167.69 (8) | 167.59 (8) |
|
| 1 | 1 | 1 | 1 |
| Radiation type | X-ray, λ = 0.7231 Å | |||
| μ (mm−1) | 1.08 | 1.08 | 1.08 | 1.08 |
| Crystal size (mm) | 0.06 × 0.05 × 0.03 | 0.07 × 0.05 × 0.03 | 0.05 × 0.05 × 0.02 | Diameter < 0.01 |
| Data collection | ||||
| Diffractometer | Four-circle diffractometer, ESRF beamline BM01 | |||
| Absorption correction | Absorption was corrected for by multi-scan methods. Empirical absorption correction using spherical harmonics, implemented in SCALE3 ABSPACK scaling algorithm ( | |||
|
| 0.834, 1 | 0.761, 1 | 0.585, 1 | 0.569, 1 |
| No. of measured, independent and observed reflections | 3363, 678, 555 | 3079, 768, 544 | 3299, 667, 382 | 3576, 797, 454 |
|
| 0.014 | 0.020 | 0.030 | 0.014 |
| (sin θ/λ)max (Å−1) | 0.733 | 0.730 | 0.724 | 0.731 |
| Range of |
|
|
|
|
|
|
|
|
| |
|
|
|
|
| |
| Refinement | ||||
|
| 0.037, 0.104, 1.01 | 0.031, 0.089, 1.08 | 0.037, 0.111, 1.44 | 0.025, 0.097, 1.03 |
| No. of reflections | 678 | 768 | 667 | 797 |
| No. of parameters | 101 | 101 | 101 | 101 |
| No. of constraints | 33 | 33 | 33 | 33 |
| Δρmax, Δρmin (e Å−3) | 0.37, −0.33 | 0.35, −0.39 | 0.43, −0.46 | 0.28, −0.30 |
Symmetry operations: (i) x 1, x 2, x 3, x 4; (ii) −x 1, −x 2, x 3, x 3 − x 4 + ½; (iii) −x 1 + ½, x 2 + 1/2, −x 3, −x 4 + ½; (iv) x 1 + ½, −x 2 + ½, −x 3, −x 3 + x 4; (v) −x 1, −x 2, −x 3, −x 4; (vi) x 1, x 2, −x 3, −x 3 + x 4 + ½; (vii) x 1 + ½, −x 2 + ½, x 3, x 4 + ½; (viii) −x 1 + ½, x 2 + ½, x 3, x 3 − x 4.
Computer programs: CrysAlis Pro (Version 1.171.38.46; Rigaku Oxford Diffraction, 2017 ▸) and JANA2006 (Petříček et al., 2014 ▸).
Figure 2Portions of reciprocal space from the measurement of SA1 on ID28. The distorted grid of broad lines with zero intensity is due to the gaps between the detector modules. The reciprocal lattice vectors a*, b* and c* are shown as red, green and blue arrows, respectively, at the origin of each section. The h3l section is shown twice with two different greyscale settings (saturation limits are 4000 and 64 000 counts, respectively) to underline the sharpness of the satellite reflections on top of the diffuse discs. q is shown as a white arrow and indicates the similarity between the direction of q and the orientation of the diffuse streaks in sections perpendicular to b*.
Figure 3An average structure model of mullite with split sites and its decomposition into diclusters and triclusters. Unit-cell borders are marked by black lines. The fractional occupancy of each site is indicated by the filling of the sphere that represents the atom. A vacancy requires that all cation sites with black labels and the central oxygen sites are simultaneously vacant, and that two triclusters are present next to it, as shown on the left-hand side of the model.
Brief description of atom sites and selected symmetrically related sites
| Label | Brief description |
|---|---|
| O1, O2 | Four O1 and two O2 atoms form the octahedral coordination of Al1 |
| O3 | O3 is bonded to two corner-sharing tetrahedra labelled |
| O4 | O4 is bonded to three tetrahedra, including the |
| O4 | O4 |
| Al1 | Atom at the origin of the unit cell bonded to six oxygen atoms |
| Al2/ | Al2 and Si2 occupy the tetrahedral |
|
|
|
| Al3/ |
|
Symmetry operations that relate the site of the asymmetric unit with the listed site: (a) x 1 − ½, −x 2 + , x 3, x 4 + ½; (b) −x 1 + ½, x 2 + ½, x 3, x 3 − x 4; (r) −x 1, 1−x 2, x 3, x 3 − x 4 + ½.
Constraints scheme applied during the refinements
α is the first component of the modulation wavevector q. The term cos(απ) originates from the phase shift between O3 and its split sites O4 and O4.
| Site | Occupancy | Amplitude relative to O3 | Phase shift relative to O3 in |
|---|---|---|---|
| O3 | Refinement parameter | 1 | 0 |
| O4 | (1 − | [1 − 2cos(απ)]−1 | ½ |
| Al2 | ½ | [2 − 4cos(απ)]−1 | 0 |
| Si2 | ½ − | [2 − 4cos(απ)]−1 | 0 |
| Al3 | (1 − | [1 − 2cos(απ)]−1 | ½ |
Selected parameters of the models from the constrained refinements
Only parameters of atomic domains with occupancy s < 1 are shown. A is the amplitude of the modulation function of the respective parameter calculated from the cosine and sine components. U eq is the equivalent isotropic displacement parameter.
| Sample | SA1 | SA2 | SA3 | QG |
|---|---|---|---|---|
| Vacancy concentration | 0.428 (4) | 0.416 (4) | 0.434 (6) | 0.426 (3) |
| Al2/Si2 | ||||
|
| 0.14896 (9) | 0.14885 (5) | 0.14905 (5) | 0.14908 (4) |
|
| 0.00140 (3) | 0.00092 (2) | 0.00050 (4) | 0.00058 (3) |
|
| 0.33959 (6) | 0.33985 (4) | 0.34005 (5) | 0.33987 (4) |
|
| 0.00152 (3) | 0.00097 (2) | 0.00048 (2) | 0.00066 (3) |
|
| 0.0121 (3) | 0.00933 (17) | 0.0096 (3) | 0.01046 (17) |
|
| 0.00083 (6) | 0.00060 (4) | 0.00043 (7) | 0.00043 (7) |
|
| 0.5 | 0.5 | 0.5 | 0.5 |
|
| 0.286 (2) | 0.2920 (19) | 0.283 (3) | 0.2868 (17) |
|
| 0.0506 (5) | 0.0355 (3) | 0.01345 (19) | 0.02048 (19) |
| Al3 | ||||
|
| 0.2630 (4) | 0.2626 (2) | 0.2624 (2) | 0.26226 (19) |
|
| 0.00119 (18) | 0.00090 (10) | 0.00049 (17) | 0.00060 (14) |
|
| 0.2056 (3) | 0.2043 (2) | 0.2058 (2) | 0.2054 (2) |
|
| 0.00103 (14) | 0.00081 (9) | 0.00039 (8) | 0.00062 (12) |
|
| 0.0112 (7) | 0.0086 (4) | 0.0105 (6) | 0.0121 (4) |
|
| 0.0026 (4) | 0.00010 (20) | 0.0025 (3) | 0.0022 (3) |
|
| 0.214 (2) | 0.2080 (19) | 0.217 (3) | 0.2132 (17) |
|
| 0.1012 (8) | 0.0711 (5) | 0.0270 (4) | 0.0409 (5) |
| O3 | ||||
|
| 0 | 0 | 0 | 0 |
|
| 0.0029 (5) | 0.0017 (3) | 0.0016 (5) | 0.0007 (5) |
|
| 0.5 | 0.5 | 0.5 | 0.5 |
|
| 0.0034 (4) | 0.0018 (3) | 0.0013 (3) | 0.0008 (5) |
|
| 0.020 (3) | 0.0196 (19) | 0.017 (3) | 0.021 (2) |
|
| 0.0017 (15) | 0.0011 (12) | 0.0001 (13) | 0.0002 (18) |
|
| 0.357 (7) | 0.376 (6) | 0.349 (8) | 0.360 (5) |
|
| 0.01838 (19) | 0.01212 (10) | 0.00379 (7) | 0.00826 (10) |
| O4 | ||||
|
| 0.449 (2) | 0.4483 (9) | 0.4534 (10) | 0.4543 (9) |
|
| 0.0016 (10) | 0.0015 (6) | 0.0009 (7) | 0.0014 (6) |
|
| 0.0509 (12) | 0.0466 (9) | 0.0482 (9) | 0.0499 (8) |
|
| 0.0006 (8) | 0.0015 (5) | 0.0008 (5) | 0.0004 (7) |
|
| 0.017 (3) | 0.0114 (17) | 0.0120 (19) | 0.0124 (16) |
|
| 0.0016 (16) | 0.0017 (8) | 0.0022 (11) | 0.0013 (15) |
|
| 0.214 (2) | 0.2080 (19) | 0.217 (3) | 0.2132 (17) |
|
| 0.1012 (8) | 0.0711 (5) | 0.0270 (4) | 0.0409 (4) |
|
| 2.5503 (19) | 2.5573 (18) | 2.5418 (20) | 2.5488 (18) |
|
| 0.0397 | 0.0254 | 0.0142 | 0.0157 |
|
| 2.54 (4) | 2.54 (4) | 2.54 (5) | 2.54 (4) |
Restrictions induced by symmetry for Al2, Al3, O4: site symmetry m, displacive modulation of z forbidden, U 13 and U 23 must be 0 and may not be modulated. For O3 (site symmetry 2/m), the same restrictions apply, with the addition of: sine component of occupational modulation must be 0, cosine components of displacive modulation must be 0, sine components of ADP modulation must be 0
Figure 4Occupational modulation functions of selected atomic domains. Site labels can be compared with Fig. 3 ▸. The curves of T, T and (O3 + O4 + O4) are identical. The same holds for the curves of Al3, Al3, O4 and O4, which are described in the text. The curves labelled tricluster, dicluster and vacancy sum up to a value of 1 and represent the respective fractions occupying the space around (0 ½ ½).
Figure 5Modulated lengths of cation–oxygen bonds resulting from the displacive modulation.
Figure 6Modulation of the volume of the tetrahedral T site. V (t) is the volume calculated using equation (1) from the modulated coordinates of the relevant oxygen atoms. V (t) is calculated using equation (2). The discrepancy indicates that the initial occupational modulation functions of Al2 and Si2 are not in agreement with the observed variation of V (t). Corrected modulation functions were calculated using equation (3) so that the expected volume and observed volume V (t) of the tetrahedron are consistent.
Figure 7Occupational modulation of Al2 and Si2 from the constrained refinement (dashed lines) and from the functions derived from V (t). The sum is the same in both cases (green/black curve).
Figure 8Comparison of the distribution of vacancies (red hexagons). (a) Vacancy distribution within one layer derived from the simplest model in superspace group Pbam(a0½)0ss with q = (0.3 0 0.5) and a vacancy concentration of 0.4 at coordinates with site symmetry 2/m, which is either vacant (red hexagon) or not vacant. This distribution can be derived without any knowledge of the average structure or chemistry of mullite. Average unit-cell borders (black) and octahedra (grey) are included for visual orientation. (b) Vacancy distribution with the structural model of the ordered superspace model. The subsequent layer, which is equal to the first layer shifted by 5a, is also shown with reduced opacity to indicate the relative location of vacancies in layers that are separated by 1c. (c) The hexagon size represents the probability that this site is vacant in the disordered SSM. In the case of SA1, this probability varies between 11.3% (smaller hexagons) and 31.5% (larger hexagons).
Figure 9Parts of the h1l sections of SA1 and SA3, both from measurements on BM01, scaled for better comparison. Satellites of SA3 (bottom) appear weaker and more diffuse compared with SA1 (top) with sharp reflections.
Figure 10Al/Si ordering trends derived from the normalized occupancies of Al on the T and T sites (light-blue dotted curves). For example, if the T site is occupied and t = 0.6, then it is either occupied by Al (56% probability) or Si (44% probability). The respective T site is occupied by 69% Al and the T–T pair in 59% of the cases is integrated in a tricluster, 56% of the Al–Al–Al type and 3% of the Si–Al–Al type. The remaining fraction form Al–Si and Si–Al diclusters (10% combined) and Si–Si diclusters (31%).