Resolving Deep Quantum-Well States in Atomically Thin 2H-MoTe2 Flakes by Nanospot Angle-Resolved Photoemission Spectroscopy.

Transition-metal dichalcogenides exhibit strong quantum confinement effects, and their electronic structure is strongly dependent on the number of layers. Resolving the thickness-dependent electronic structure is important. While the electronic structure of atomically thin 2H-MoSe2 or 2H-MoS2 have been explored, information on the experimental electronic structure of 2H-MoTe2 is still missing. Here, by using nanospot angle-resolved photoemission spectroscopy (nanoARPES), we reveal the experimental electronic structure of exfoliated 2H-MoTe2 thin flakes with different thickness (three, five, and seven monolayers). Well-separated quantum-well states are clearly observed in thin 2H-MoTe2 flakes at deep valence bands at energies between -3 to -5 eV, while those at the top of the valence band between -1 and -2 eV are much more closely spaced compared with those from 2H-MoSe2 and 2H-MoS2. First-principles calculation shows that the main difference is attributed to the weaker hybridization and smaller energy difference between Mo 4d z2 and Te 5p z orbitals as compared with Se 4p z and S 3p z orbitals. Our work demonstrates the power of nanoARPES in resolving the electronic structure of atomically thin exfoliated flakes.