| Literature DB >> 29938499 |
Arnob Islam1, Wei Du1, Vida Pashaei1, Hao Jia1, Zenghui Wang1, Jaesung Lee1, Guo Jun Ye2, Xian Hui Chen2, Philip X-L Feng1.
Abstract
Strong in-plane anisotropy of atomic layer and thin-film black phosphorus (P) offers new device perspectives and stimulates increasing interest and explorations, where precisely determining the black P crystal orientation and anisotropic axes is a necessity. Here, we demonstrate that the crystal orientation and intrinsic in-plane optical anisotropy of black P crystals in a broad thickness range (from ∼5 to ∼300 nm) can be directly and precisely determined, by polarized reflectance measurement alone, in visible range. Combining experiments with modeling of optical anisotropy and multilayer interference effects, we elucidate the underlying principles and validate these measurements. The polarized reflectance method is not only easy to implement but also deterministic, nondestructive, and effective for both on-substrate and suspended black P atomic layers and thin films.Entities:
Keywords: black phosphorus; crystal orientation; in-plane anisotropy; polarized Raman spectroscopy; polarized reflectance measurement
Year: 2018 PMID: 29938499 DOI: 10.1021/acsami.8b05408
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229